scholarly journals Physical Mechanism of Field Modulation Effects in Ion Implanted Edge Termination of Vertical GaN Schottky Barrier Diodes

2021 ◽  
Author(s):  
Ruiyuan Yin ◽  
Chiachia Li ◽  
Bin Zhang ◽  
Jinyan Wang ◽  
Yunyi Fu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Physical Mechanism ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Field Modulation ◽  
Ion Implanted

Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes without Edge Termination

2021 ◽  
pp. 1-1
Author(s):  
Qiming He ◽  
Weibing Hao ◽  
Xuanze Zhou ◽  
Yu Li ◽  
Kai Zhou ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Edge Termination

Ion-implanted low-barrier PtSi Schottky-barrier diodes

1980 ◽  
Vol 27 (2) ◽  
pp. 420-425 ◽  
Author(s):  
J.B. Bindell ◽  
W.M. Moller ◽  
E.F. Labuda
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Ion Implanted

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Forward Current ◽  
Current Voltage ◽  
Thick Oxide Layer ◽  
P Type

ABSTRACTP-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation

2013 ◽  
Vol 30 (5) ◽  
pp. 057303 ◽  
Author(s):  
Wei-Zong Xu ◽  
Li-Hua Fu ◽  
Hai Lu ◽  
Fang-Fang Ren ◽  
Dun-Jun Chen ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Resistivity ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Boron Implantation

High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures

2005 ◽  
Vol 44 (No. 40) ◽  
pp. L1244-L1247 ◽  
Author(s):  
Bor Wen Liou ◽  
Tron Min Chen ◽  
Chih Wei Chen ◽  
Kai Ming Uang ◽  
Shui Jinn Wang
Keyword(s):  
Schottky Barrier ◽  
High Power ◽  
Schottky Barrier Diodes ◽  
Edge Termination

Edge termination techniques for p-type diamond Schottky barrier diodes

2008 ◽  
Vol 17 (4-5) ◽  
pp. 809-812 ◽  
Author(s):  
K. Ikeda ◽  
H. Umezawa ◽  
S. Shikata
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
P Type

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

2018 ◽  
Vol 65 (5) ◽  
pp. 1765-1770 ◽  
Author(s):  
Eliana Acurio ◽  
Felice Crupi ◽  
Nicolo Ronchi ◽  
Brice De Jaeger ◽  
Benoit Bakeroot ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Edge Termination

Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes

2005 ◽  
Vol 483-485 ◽  
pp. 941-944 ◽  
Author(s):  
M. Furno ◽  
F. Bonani ◽  
G. Ghione ◽  
Sergio Ferrero ◽  
Samuele Porro ◽  
...  
Keyword(s):  
Experimental Study ◽  
Numerical Simulations ◽  
Schottky Barrier ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes ◽  
Electrical Measurements ◽  
Process Technology ◽  
Edge Termination ◽  
Fabrication And Characterization

We present a theoretical and experimental study on the design, fabrication and characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers. Numerical simulations were performed with a commercial tool on different edge termination structures, with the aim of optimizing the device behavior. For each termination design, SBD were fabricated and characterized by means of electrical measurements vs. temperature. Simulations provided also useful data for the assessment of the device process technology.

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