Effect of low temperature plasma processing on physicochemical properties and cooking quality of basmati rice

2015 ◽  
Vol 31 ◽  
pp. 83-90 ◽  
Author(s):  
Rohit Thirumdas ◽  
R.R. Deshmukh ◽  
U.S. Annapure
2018 ◽  
Vol 20 (4) ◽  
pp. 044004 ◽  
Author(s):  
Xingmin SHI ◽  
Jinren LIU ◽  
Guimin XU ◽  
Yueming WU ◽  
Lingge GAO ◽  
...  

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.


2020 ◽  
Vol 40 (5) ◽  
pp. 1311-1330 ◽  
Author(s):  
Tomáš Homola ◽  
Zuzana Ďurašová ◽  
Masoud Shekargoftar ◽  
Pavel Souček ◽  
Petr Dzik

2005 ◽  
Vol 2 (1) ◽  
pp. 7-15 ◽  
Author(s):  
Riccardo d'Agostino ◽  
Pietro Favia ◽  
Christian Oehr ◽  
Michael R. Wertheimer

2015 ◽  
Vol 17 (26) ◽  
pp. 17063-17068 ◽  
Author(s):  
Debajyoti Das ◽  
Debjit Kar

Studies on the vertical electrical transport of size-controlled silicon nano-crystallites (Si-ncs) obtained simply by controlling the thickness of the nc-Si:H sub-layer (tnc) in the a-Si:H/nc-Si:H superlattice thin films grown by low temperature plasma processing in PE-CVD.


2014 ◽  
Vol 567 ◽  
pp. 012034 ◽  
Author(s):  
Ruz R Saubanov ◽  
V V Zvezdin ◽  
I H Israfilov ◽  
I I Haybullin ◽  
R R Rakhimov

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