The calculation of plasma reflection with parallel (FD)2TD method based on MPI

A three-dimensional mathematical model has been established to research the relation between the plasma reflection and status of keyhole during the keyhole PAW processing. It has been found that the strength of the plasma reflection is related to the keyhole dimension. Another condition to make the plasma refection appearance is that the keyhole or concave in the pool must be unsymmetrical about the axis of the plasma arc. The mechanism of detecting circuit designed based on the fact that the plasma refection is able to indicate the status of keyhole is mathematically studied. The result shows that the voltage signal in the detecting circuit can be used to indicate the status of keyhole.

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Plasma reflection from highly Si-doped InGaAs∕AlAsSb quantum wells

10.1063/1.3295355 ◽

2010 ◽

Author(s):

Shin-ichiro Gozu ◽

Teruo Mozume ◽

Hiroshi Ishikawa ◽

Marília Caldas ◽

Nelson Studart

Keyword(s):

Quantum Wells ◽

Si Doped ◽

Plasma Reflection

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A novel CN–ICCG–FDTD algorithm research of plasma reflection and transmission characteristics of electromagnetic wave

Optik ◽

10.1016/j.ijleo.2014.07.033 ◽

2014 ◽

Vol 125 (19) ◽

pp. 5669-5672

Author(s):

Zhong Peng ◽

Hong Wei Yang ◽

Rui Weng ◽

Ze Kun Yang

Keyword(s):

Electromagnetic Wave ◽

Transmission Characteristics ◽

Reflection And Transmission ◽

Plasma Reflection

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Investigation of the features of the fine structure of crystals by the method of plasma reflection

Doklady Physics ◽

10.1134/1.1526430 ◽

2002 ◽

Vol 47 (11) ◽

pp. 815-818

Author(s):

A. S. Mal’tsev ◽

V. A. Petrovsky ◽

S. A. Troshev ◽

A. E. Sukharev

Keyword(s):

Fine Structure ◽

Plasma Reflection

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Sub-Wavelength Texturing for Solar Cells Using Interferometric Lithography

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.51.115 ◽

2006 ◽

Vol 51 ◽

pp. 115-120 ◽

Cited By ~ 4

Author(s):

W.L. Chiu ◽

M.M. Alkaisi ◽

G. Kumaravelu ◽

R.J. Blaikie ◽

R.J. Reeves ◽

...

Keyword(s):

Defect Density ◽

Substantial Reduction ◽

Surface Texturing ◽

Silicon Substrates ◽

Textured Surface ◽

Large Area ◽

Periodic Patterns ◽

Interferometric Lithography ◽

Plasma Reflection ◽

Sub Wavelength

We have employed Interferometric Lithography (IL) for sub-wavelength surface texturing on large area silicon substrates. Low defect density Reactive Ion Etching (RIE) processes have been developed to transfer the pattern into the silicon using SF 6 plasma. Reflection measurements on the sub-wavelength textured surface have been carried out and show a substantial reduction from ~30% to below 4% over the spectrum range from 400nm to 1200nm. IL is a mask-less lithography technique which is used to define periodic patterns. The theoretical limit of the pitch size of the structure is half of the wavelength of the light source. Hence, the sub-wavelength patterns can be achieved easily. Moreover, sub-wavelength texturing requires short RIE processes; most of the plasma-induced damage on the silicon surface can be avoided.

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