Annealing effect on structural and optical constants of SnS thin films for solar cells application

Optik ◽  
2017 ◽  
Vol 131 ◽  
pp. 231-241 ◽  
Author(s):  
Narjes Kabiri Samani ◽  
Zahra Dehghani Tafti ◽  
Hojjat Amrollahi Bioki ◽  
Mahmood Borhani Zarandi ◽  
Shirin Shayegh
2011 ◽  
Vol 50 (5S2) ◽  
pp. 05FH03 ◽  
Author(s):  
Mutsumi Sugiyama ◽  
Yoshitsuna Murata ◽  
Tsubasa Shimizu ◽  
Kottadi Ramya ◽  
Chinna Venkataiah ◽  
...  

2019 ◽  
Vol 11 (19) ◽  
pp. 17539-17554 ◽  
Author(s):  
Nicolae Spalatu ◽  
Jaan Hiie ◽  
Reelika Kaupmees ◽  
Olga Volobujeva ◽  
Juri Krustok ◽  
...  

2000 ◽  
Vol 609 ◽  
Author(s):  
Sally-anne F. Rowlands ◽  
John Livingstone ◽  
Christopher P. Lund

ABSTRACTThe optical quantum efficiency and spectral response of p-i-n thin film amorphous silicon (a-Si:H) solar cells have been modeled using software based on optical admittance analysis. The optical constants of a-Si:H and Indium Tin Oxide (ITO) thin film layers have been measured by Variable Angle Spectroscopic Ellipsometry (VASE) and used as inputs into the optical admittance analysis program in order to model cells constructed from these films.Amorphous silicon thin films and p-i-n assemblies have been deposited by glow discharge and reactive sputtering techniques. The optical constants of doped and intrinsic a-Si:H thin films were determined by VASE and the film thickness verified by Scanning Electron Microscopy studies. The optical constants of commercially available transparent conducting oxide (TCO) coated substrates have also been determined by VASE.The experimental transmission spectra of p-i-n assemblies are compared with transmission spectra that have been modeled using the measured optical constants. Results of modeling different a-Si:H solar cell structures using these materials are presented, including a study of the optimal TCO layer thickness for p-i-n a-Si:H solar cells. This work shows that optical admittance modeling gives a good prediction of the optical behavior of p-i-n assemblies, but that accurate measurements of the optical constants of the component films are required in order to model effectively the optical quantum efficiency and photocurrent.


2014 ◽  
Vol 32 (6) ◽  
pp. 061506 ◽  
Author(s):  
Naidu Revathi ◽  
Sergei Bereznev ◽  
Mihkel Loorits ◽  
Jaan Raudoja ◽  
Julia Lehner ◽  
...  

2011 ◽  
Vol 8 (2) ◽  
pp. 566-570
Author(s):  
Baghdad Science Journal

Chlorine doped SnS have been prepared utilizing chemical spray pyrolysis. The effects of chlorine concentration on the optical constants were studied. It was seen that the transmittance decreased with doping, while reflectance, refractive index, extinction coefficient, real and imaginary parts of dielectric constant were increased as the doping percentage increased. The results show also that the skin depth decrease as the chlorine percentage increased which could be assure that it is transmittance related.


2011 ◽  
Vol 50 (5) ◽  
pp. 05FH03 ◽  
Author(s):  
Mutsumi Sugiyama ◽  
Yoshitsuna Murata ◽  
Tsubasa Shimizu ◽  
Kottadi Ramya ◽  
Chinna Venkataiah ◽  
...  

2016 ◽  
Vol 615 ◽  
pp. 25-28 ◽  
Author(s):  
Mutsumi Sugiyama ◽  
Tsubasa Yokoi ◽  
Akihiko Henmi ◽  
Takashi Asano

RSC Advances ◽  
2014 ◽  
Vol 4 (74) ◽  
pp. 39343-39350 ◽  
Author(s):  
Malkeshkumar Patel ◽  
Abhijit Ray

This work describesex situCu-doped SnS demonstrating a largeJph= 3.2 mA cm−2as a photocathode and enhancedVOC= 465 mV in a hetero-junction solar cell.


2014 ◽  
Vol 556-562 ◽  
pp. 278-281
Author(s):  
Zhi Gang Wang ◽  
Wen Cheng Gao ◽  
Jing Li ◽  
Ke Gao Liu

SnS thin film, a potential earth-abundant photovoltaic material, has particularly generated interest because of its nontoxic nature, the band gap of it matches well with solar spectrum and its high absorption coefficient. It provides a brief description of the development of SnS thin film for solar cells, and surveys several preparation methods of SnS thin film, then introduces the crystal structure of SnS. The effects of different doping elements and concentrations for SnS thin film on performance were outlined, and the development and the structure of solar cells based on SnS thin films were discussed. Finally, the development tendency and prospects were predicted.


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