2-D axisymmetric modeling for temperature of GaAs induced by repetitive pulse laser at 1064 nm and 532 nm

Optik ◽  
2017 ◽  
Vol 132 ◽  
pp. 67-74 ◽  
Author(s):  
Guibo Chen
Keyword(s):  
Pulse Laser ◽  
Axisymmetric Modeling ◽  
532 Nm

scholarly journals Responses of human sensory characteristics to 532 nm pulse laser stimuli

2016 ◽  
Vol 24 (s2) ◽  
pp. S697-S705 ◽  
Author(s):  
Ji-Sun Kim ◽  
Han-Byeol Oh ◽  
A-Hee Kim ◽  
Jun-Sik Kim ◽  
Eun-Suk Lee ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Sensory Characteristics ◽  
532 Nm

Effects of Liquid Viscosity on Laser-Induced Shock Dynamics

2019 ◽  
Author(s):  
Hiroki Kurahara ◽  
Keita Ando
Keyword(s):  
Pulse Laser ◽  
High Speed ◽  
Water Solution ◽  
Plasma Pressure ◽  
Rapid Expansion ◽  
Glycerol Concentration ◽  
Glycerol Water ◽  
Initial Plasma ◽  
Front Position ◽  
532 Nm

Abstract We experimentally study the effects of viscosity on laser-induced shockwave in glycerol-water solution. A shockwave is generated through rapid expansion of plasma, which is induced by focusing a 6 ns pulse laser (532 nm) of energy fixed at 1.66 ± 0.22 mJ into 80, 90, 100 wt% glycerol-water solution. The shockwave propagation is recorded by an ultra-high-speed camera taken at 100 Mfps together with a pulse laser stroboscope. The photographs are used to determine the shock front position as a function of time, which allows for calculating the shock pressure according to the stiffened-gas type Rankine-Hugoniot relation. It turns out that the initial plasma pressure is reduced by having higher glycerol concentration (i.e., higher viscosity); therefore, wave steepening effect is deemphasized, resulting in a smaller decay rate.

NONLINEAR-OPTICAL AND OPTICAL LIMITING PROPERTIES OF PHENOXY-PHTHALOCYANINES STUDIED USING THE Z-SCAN TECHNIQUE

2009 ◽  
Vol 18 (04) ◽  
pp. 583-589 ◽  
Author(s):  
YUNDONG ZHANG ◽  
LEI MA ◽  
CHAOBO YANG ◽  
PING YUAN
Keyword(s):  
Absorption Coefficient ◽  
Low Power ◽  
Pulse Laser ◽  
Nonlinear Absorption ◽  
Nonlinear Optical ◽  
Optical Limiting ◽  
Nonlinear Absorption Coefficient ◽  
Potential Candidate ◽  
Single Beam ◽  
532 Nm

The nonlinear-optical and optical limiting properties of 2(3), 9(10), 16(17), 23(24) phenoxy-phthalocyanines have been investigated using a 10-ns-pulse laser at 532 nm. The nonlinear absorption coefficient (β) is measured by the single beam Z-scan technique. We have observed low power optical limiting, with low limiting thresholds, based on nonlinear absorption in the sample. These studies indicate that the phthalocyanine material is a potential candidate for low power optical limiting applications.

Multiscale analysis of single- and multiple-pulse laser-induced damages in HfO2/SiO2 multilayer dielectric films at 532 nm

2015 ◽  
Vol 13 (9) ◽  
pp. 091404-91408 ◽  
Author(s):  
Wenwen Liu Wenwen Liu ◽  
Chaoyang Wei Chaoyang Wei ◽  
Kui Yi Kui Yi ◽  
Jianda Shao Jianda Shao
Keyword(s):  
Pulse Laser ◽  
Multiscale Analysis ◽  
Dielectric Films ◽  
Multiple Pulse ◽  
532 Nm ◽  
Multilayer Dielectric

Mechanistic comparison of pulse laser induced phase separation of particulates from cellulose paper at 213 nm and 532 nm

2012 ◽  
Vol 110 (2) ◽  
pp. 501-509 ◽  
Author(s):  
S. Arif ◽  
M. Forster ◽  
S. Bushuk ◽  
A. Kouzmouk ◽  
H. Tatur ◽  
...  
Keyword(s):  
Phase Separation ◽  
Pulse Laser ◽  
Cellulose Paper ◽  
532 Nm

Laser Chemical Etching Trench Refinements for Backside Debug Journey to the Circuit Layer

2020 ◽  
Author(s):  
Matthew M. Mulholland ◽  
Shida Tan ◽  
Muhammad Usman Raza ◽  
Matthew Levesque ◽  
Jordan Furlong ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Continuous Wave ◽  
Ion Beam ◽  
Laser System ◽  
Laser Etching ◽  
Laser Patterning ◽  
Silicon Thickness ◽  
532 Nm

Abstract The journey to the circuit layer will be described by first discussing baseline processes of laser assisted chemical etching (LACE) steps before the focused ion beam (FIB) workflow. These LACE processes take advantage of a dual 532 nm continuous wave (CW) and pulse laser system, however limitations and overhead that is transferred over to the FIB operator will be demonstrated. Experiments show an additional third 355 nm ultraviolet (UV) pulse laser process introduction into the workflow can further reduce the remaining silicon thickness (RST) relieving FIB overhead. In addition, complex pulse laser patterning techniques will show a refinement to nonuniform produced silicon. Finally, other pulse laser patterning techniques such as polygon etch capability will allow laser etching around and in-between features to enhance circuit layer accessibility for debug operations.

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