The physical model of fixed-abrasive diamond wire-sawing monocrystalline silicon was
founded to analyze the elastic deformation of the wire, supposing that every grit was connected to
the surface of the wire by a spring. Ignoring lateral vibration of the wire, the geometrical model of
wire-sawing was founded; the average cut depth of single grit was calculated theoretically. Based
the indentation fracture mechanics and investigations on brittle-ductile transition of machining
monocrystalline silicon, the removal mechanism and surface formation was studied theoretically. It
shows that in the case of wire-sawing velocity of 10m/s or higher, infeed velocity of 0.20mm/s and
diamond grain size of 64μm or smaller, the chip formation and material removal is in a brittle
regime mainly, but the silicon wafer surface formation is sawed in a ductile regime. The size of the
abrasives, the wire-saw velocity and infeed velocity can influence the sawing process obviously.
Erratum to: Chemo-mechanical manufacturing of fused silica by combining ultrasonic vibration with fixed-abrasive pellets