Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots

2013 ◽  
Vol 59 ◽  
pp. 89-92 ◽  
Author(s):  
O. Gustafsson ◽  
A. Karim ◽  
Q. Wang ◽  
J. Berggren ◽  
C. Asplund ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Long Wavelength Infrared

A Long-Wavelength Infrared Photodetector with Self-Organized InAs Quantum Dots Embedded on HEMT-Like Structure

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2442-2444 ◽  
Author(s):  
Taehee Cho ◽  
Jong-Wook Kim ◽  
Jae-Eung Oh ◽  
Jeong-Woo Choe ◽  
Songcheol Hong
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Self Organized ◽  
Long Wavelength Infrared

Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors

2004 ◽  
Vol 85 (6) ◽  
pp. 1003-1005 ◽  
Author(s):  
Ying Chao Chua ◽  
E. A. Decuir ◽  
B. S. Passmore ◽  
K. H. Sharif ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Electronic Structure of Long Wavelength (>1.3μm) GaAsSb-capped InAs Quantum Dots

2007 ◽  
Author(s):  
T. J. Badcock ◽  
D. J. Mowbray ◽  
E. Nabavi ◽  
H. Y. Liu ◽  
M. J. Steer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Inas Quantum Dots ◽  
Long Wavelength

Normal Incidence Intersubband Transitions in InGaAs/GaAs Quantum Dots With Non-monotonic Shift

2003 ◽  
Vol 776 ◽  
Author(s):  
M. L. Hussein ◽  
W. Q. Ma ◽  
G.J. Salamo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Normal Incidence ◽  
Peak Shift ◽  
Infrared Region ◽  
Optical Absorption Coefficient ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Absorbance Peak ◽  
Long Wavelength Infrared

AbstractMultiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under normal incidence. The absorbance peak shift with dot size was investigated and revealed non-monotonic behavior of intersubband transitions. The optical absorption coefficient was calculated to be in order of 3.8×103 cm-2.

MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting

2006 ◽  
Vol 35 (1) ◽  
pp. 194-198 ◽  
Author(s):  
Y.H. Jiao ◽  
J. Wu ◽  
B. Xu ◽  
P. Jin ◽  
L.J. Hu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Long Wavelength

Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate

2005 ◽  
Vol 36 (2) ◽  
pp. 99-103
Author(s):  
L. Beji ◽  
L. Bouzaïene ◽  
B. Ismaïl ◽  
L. Sfaxi ◽  
H. Maaref ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gaas Substrate ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Wavelength Emission ◽  
Porous Gaas
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