A Long-Wavelength Infrared Photodetector with Self-Organized InAs Quantum Dots Embedded on HEMT-Like Structure

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2442-2444 ◽  
Author(s):  
Taehee Cho ◽  
Jong-Wook Kim ◽  
Jae-Eung Oh ◽  
Jeong-Woo Choe ◽  
Songcheol Hong
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Self Organized ◽  
Long Wavelength Infrared

Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots

2013 ◽  
Vol 59 ◽  
pp. 89-92 ◽  
Author(s):  
O. Gustafsson ◽  
A. Karim ◽  
Q. Wang ◽  
J. Berggren ◽  
C. Asplund ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector

2008 ◽  
Vol 93 (13) ◽  
pp. 131115 ◽  
Author(s):  
A. V. Barve ◽  
S. Y. Shah ◽  
J. Shao ◽  
T. E. Vandervelde ◽  
R. V. Shenoi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Dark Current ◽  
Resonant Tunneling ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

2000 ◽  
Vol 31 (1) ◽  
pp. 1-7 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Self Organized ◽  
Gaas Substrates ◽  
Wavelength Emission

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pal ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

AbstractThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

Infrared Photodetector with Self-Organized InAs Quantum Dots

1998 ◽  
Author(s):  
Taehee Cho ◽  
Jongwook Kim ◽  
Jaeung Oh ◽  
Jungwoo Choe ◽  
Songcheol Hong
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Self Organized

Long wavelength infrared photodetector using submonolayer quantum dots

2016 ◽  
Author(s):  
Jun Oh Kim ◽  
Zahyun Ku ◽  
Augustine Urbas ◽  
Sang-Woo Kang ◽  
Sang Jun Lee
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 707 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

ABSTRACTThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

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