Influence of thermal treatment on tuning the ferromagnetism in Mn-doped ZnO film

2014 ◽  
Vol 590 ◽  
pp. 446-452 ◽  
Author(s):  
Q.Q. Gao ◽  
Q.X. Yu ◽  
B. Chen ◽  
H. Zhu
2008 ◽  
Vol 53 (9(2)) ◽  
pp. 953-957
Author(s):  
S. Y. Park ◽  
Y. S. Lee ◽  
Y. P. Lee ◽  
J. Y. Rhee ◽  
J-H. Kang
Keyword(s):  
Zno Film ◽  

2011 ◽  
Vol 16 (3) ◽  
pp. 216-219 ◽  
Author(s):  
Devaraj Soundararajan ◽  
Jaime Santoyo-Salazar ◽  
Jang-Myoun Ko ◽  
Ki-Hyeon Kim

2015 ◽  
Vol 27 (1) ◽  
pp. 697-704
Author(s):  
Qianqian Gao ◽  
Yuqiang Dai ◽  
Qingxuan Yu ◽  
Chengbo Li ◽  
Xianchang Li ◽  
...  

Author(s):  
Zheng-Zheng LI ◽  
Yong ZHANG ◽  
Zhi-Zhan CHEN ◽  
Er-Wei SHI

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 115
Author(s):  
Suhail Huzaifa Jaafar ◽  
Mohd Hafiz Mohd Zaid ◽  
Khamirul Amin Matori ◽  
Sidek Hj. Ab Aziz ◽  
Halimah Mohamed Kamari ◽  
...  

This research paper proposes the usage of a simple thermal treatment method to synthesis the pure and Eu3+ doped ZnO/Zn2SiO4 based composites which undergo calcination process at different temperatures. The effect of calcination temperatures on the structural, morphological, and optical properties of ZnO/Zn2SiO4 based composites have been studied. The XRD analysis shows the existence of two major phases which are ZnO and Zn2SiO4 crystals and supported by the finding in the FT-IR. The FESEM micrograph further confirms the existence of both ZnO and Zn2SiO4 crystal phases, with progress in the calcination temperature around 700–800 °C which affects the existence of the necking-like shape particle. Absorption humps discovered through UV-Vis spectroscopy revealed that at the higher calcination temperature effects for higher absorption intensity while absorption bands can be seen at below 400 nm with dropping of absorption bands at 370–375 nm. Two types of band gap can be seen from the energy band gap analysis which occurs from ZnO crystal and Zn2SiO4 crystal progress. It is also discovered that for Eu3+ doped ZnO/Zn2SiO4 composites, the Zn2SiO4 crystal (5.11–4.71 eV) has a higher band gap compared to the ZnO crystal (3.271–4.07 eV). While, for the photoluminescence study, excited at 400 nm, the emission spectra of Eu3+ doped ZnO/Zn2SiO4 revealed higher emission intensity compared to pure ZnO/Zn2SiO4 with higher calcination temperature exhibit higher emission intensity at 615 nm with 700 °C being the optimum temperature. The emission spectra also show that the calcination temperature contributed to enhancing the emission intensity.


2012 ◽  
Vol 22 (19) ◽  
pp. 9678 ◽  
Author(s):  
Rajiv Ramanujam Prabhakar ◽  
Nripan Mathews ◽  
K B Jinesh ◽  
K R G Karthik ◽  
Stevin Snellius Pramana ◽  
...  
Keyword(s):  

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