Realization of Room-Temperature Ferromagnetism and of Improved Carrier Mobility in Mn-Doped ZnO Film by Oxygen Deficiency, Introduced by Hydrogen and Heat Treatments

2007 ◽  
Vol 19 (21) ◽  
pp. 3496-3500 ◽  
Author(s):  
S. Y. Park ◽  
P. J. Kim ◽  
Y. P. Lee ◽  
S. W. Shin ◽  
T. H. Kim ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Room Temperature ◽  
Oxygen Deficiency ◽  
Room Temperature Ferromagnetism ◽  
Heat Treatments ◽  
Zno Film ◽  
Doped Zno ◽  
Mn Doped

Room Temperature Ferromagnetism and Fast Ultraviolet Photoresponse of Inkjet-Printed Mn-Doped ZnO Thin Films

2010 ◽  
Vol 46 (6) ◽  
pp. 2152-2155 ◽  
Author(s):  
Yan Wu ◽  
K. V. Rao ◽  
Wolfgang Voit ◽  
Takahiko Tamaki ◽  
O. D. Jayakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

The Structural, Electrical, Magnetic Properties of (Cu, Co) Co-Doped ZnO Thin Film

2014 ◽  
Vol 556-562 ◽  
pp. 429-432
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
Ferromagnetic Semiconductors ◽  
Zno Thin Film ◽  
Zno Film ◽  
Co Doping ◽  
Doped Zno ◽  
Co Doped

Successful synthesis of room-temperature ferromagnetic semiconductors, (Cu, Co) co-doped ZnO film is obtained by sol-gel method. It is found that the essential ingredient in achieving room-temperature ferromagnetism is Cu co-doping. By Hall-effect measurement ap-type conductivity was observed for the Cu co-doped films, which induced the room-temperature ferromagnetism.

Room Temperature Ferromagnetism and Band Gap Engineering in Mg Doped ZnO RF/DC Sputtered Films

2013 ◽  
Vol 1577 ◽  
Author(s):  
Sreekanth K. Mahadeva ◽  
Zhi-Yong Quan ◽  
Jin-Cheng Fan ◽  
Hasan B. Albargi ◽  
Gillian A Gehring ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Ambient Conditions ◽  
Zno Film ◽  
Band Gap Engineering ◽  
Sputtered Films ◽  
Doped Zno ◽  
Mg Doped ◽  
Comprehensive Study

ABSTRACTMg doped ZnO thin films were prepared by DC/RF magnetron co-sputtering in (Ar+O2) ambient conditions using metallic Mg and Zn targets. We present a comprehensive study of the effects of film thickness on the structural, optical and magnetic properties. Room temperature ferromagnetism was observed in the films and the saturation magnetization (MS) increases at first as the film’s thickness increases and then decreases. The MS value as high as ∼15.76 emu/cm3 was achieved for the Mg-doped ZnO film of thickness 120 nm. The optical band gap of the films determined to be in the range 3.42 to 3.52 eV.

scholarly journals Activation of room-temperature ferromagnetism in Mn doped ZnO thin films by N codoping

2009 ◽  
Vol 58 (8) ◽  
pp. 5763
Author(s):  
Zou Wen-Qin ◽  
Lu Zhong-Lin ◽  
Wang Shen ◽  
Liu Yuan ◽  
Lu Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy

2012 ◽  
Vol 112 (5) ◽  
pp. 053708 ◽  
Author(s):  
Zheng Zuo ◽  
Huimei Zhou ◽  
Mario J. Olmedo ◽  
Jieying Kong ◽  
Ward P. Beyermann ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
High Quality ◽  
Doped Zno ◽  
Mn Doped
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