Insight into the structural evolution during TiN film growth via atomic resolution TEM

2018 ◽  
Vol 754 ◽  
pp. 257-267 ◽  
Author(s):  
Zhen Xu ◽  
Zaoli Zhang ◽  
Matthias Bartosik ◽  
Yong Zhang ◽  
Paul H. Mayrhofer ◽  
...  
Keyword(s):  
Film Growth ◽  
Structural Evolution ◽  
Atomic Resolution ◽  
Tin Film ◽  
Insight Into

Copper–oxygen Dynamics in Tyrosinase

2019 ◽  
Author(s):  
Nobutaka Fujieda ◽  
Sachiko Yanagisawa ◽  
Minoru Kubo ◽  
Genji Kurisu ◽  
Shinobu Itoh
Keyword(s):  
Catalytic Mechanism ◽  
Substrate Binding ◽  
Active Form ◽  
Copper Ion ◽  
Atomic Resolution ◽  
Oxygen Species ◽  
X Ray ◽  
Oxygen Dynamics ◽  
Insight Into ◽  
Copper Centre

To unveil the activation of dioxygen on the copper centre (Cu<sub>2</sub>O<sub>2</sub>core) of tyrosinase, we performed X-ray crystallograpy with active-form tyrosinase at near atomic resolution. This study provided a novel insight into the catalytic mechanism of the tyrosinase, including the rearrangement of copper-oxygen species as well as the intramolecular migration of copper ion induced by substrate-binding.<br>

High-rate a-Si:H and μc-Si:H Film Growth Studied by Advanced Plasma and in situ Film Diagnostics

2002 ◽  
Vol 715 ◽  
Author(s):  
W.M.M. Kessels ◽  
P.J. van den Oever ◽  
J.P.M. Hoefnagels ◽  
J. Hong ◽  
I.J. Houston ◽  
...  
Keyword(s):  
Film Growth ◽  
Film Studies ◽  
Interface Layer ◽  
Surface Reactivity ◽  
Attenuated Total Reflection ◽  
High Rate ◽  
High Deposition Rate ◽  
Basic Insight ◽  
Insight Into

AbstractPlasma and in situ film studies have been applied to the expanding thermal plasma to obtain basic insight into the deposition of a-Si:H and μc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals' surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.

Conformal and Smooth TiN Film Growth By Using ALD Method

2020 ◽  
Vol MA2020-02 (14) ◽  
pp. 1372-1372
Author(s):  
Hyunchol Cho ◽  
Sung-Hoon Jung ◽  
Ben Nie ◽  
Anu Nair ◽  
Zhigang Chen ◽  
...  
Keyword(s):  
Film Growth ◽  
Tin Film

scholarly journals Direct Insight into Grain Boundary Reconstruction in PolycrystallineCu(In,Ga)Se2with Atomic Resolution

2012 ◽  
Vol 108 (7) ◽  
Author(s):  
Daniel Abou-Ras ◽  
Bernhard Schaffer ◽  
Miroslava Schaffer ◽  
Sebastian S. Schmidt ◽  
Raquel Caballero ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Atomic Resolution ◽  
Insight Into ◽  
Boundary Reconstruction
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