Conformal and Smooth TiN Film Growth By Using ALD Method

2020 ◽  
Vol MA2020-02 (14) ◽  
pp. 1372-1372
Author(s):  
Hyunchol Cho ◽  
Sung-Hoon Jung ◽  
Ben Nie ◽  
Anu Nair ◽  
Zhigang Chen ◽  
...  
Keyword(s):  
1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3266-3270 ◽  
Author(s):  
Kenya Sano ◽  
Michihiro Oose ◽  
Takashi Kawakubo
Keyword(s):  
Ion Beam ◽  

1995 ◽  
Vol 387 ◽  
Author(s):  
Hung Liao ◽  
Hannes Stippel ◽  
Krishna Reddy ◽  
Sam Geha ◽  
Kevin Brown ◽  
...  

AbstractExperimental and simulation studies were conducted in an attempt to understand the effects of collimator life time on the Ti and TiN film growth rates and conformalities in sputter deposition processes. The Ti and TiN films were deposited with and without collimation. The hexagonal cells of the collimator used in this study have a 1:1 aspect ratio. A Monte Carlo based simulator was used to calculate the angular distributions of species exiting from a collimator cell and the percentage decrease in the rate of film growth as a function of the collimator life time. Then, a low pressure deposition process simulator, EVOLVE, was used to predict the conformalities of deposited films in contacts or vias, assuming that the films were uniformly deposited on the side-walls of collimator cells. We conclude that the loss in growth rate is largely due to the shrinkage in the cross sectional area of the collimator cell inlets. We arrive at this conclusion after comparing an estimated film thickness on the collimator side-walls with experimental measurements. With extended collimator usage, the predicted and experimental film profiles in contacts or vias show increasing bottom coverage and decreasing side-wall coverages.


2018 ◽  
Vol 754 ◽  
pp. 257-267 ◽  
Author(s):  
Zhen Xu ◽  
Zaoli Zhang ◽  
Matthias Bartosik ◽  
Yong Zhang ◽  
Paul H. Mayrhofer ◽  
...  

Author(s):  
Yong Woo Jung ◽  
Rae Seo Lee ◽  
Jin Ho Kim ◽  
Yu Seong Gim ◽  
Dong Gi Kim ◽  
...  

2012 ◽  
Vol 2012 (0) ◽  
pp. 303-304
Author(s):  
Hiroki Yamamoto ◽  
Ken-ichirou Tanoue ◽  
Yuya Hatori ◽  
Tatuo Nisimura ◽  
Yuken Iwamoto

2000 ◽  
Vol 15 (11) ◽  
pp. 2414-2424 ◽  
Author(s):  
Carmela Amato-Wierda ◽  
Derk A. Wierda

Hydrazine was used as a coreactant with tetrakis(dimethylamido)titanium for the low-temperature chemical vapor deposition of TiN between 50 and 200 °C. The TiN film-growth rates ranged from 5 to 45 nm/min. Ti:N ratios of approximately 1:1 were achieved. The films contain between 2 and 25 at.% carbon, as well as up to 36 at.% oxygen resulting from diffusion after air exposure. The resistivity of these films is approximately 104 μΩ cm. Annealing the films in ammonia enhances their crystallinity. The best TiN films were produced at 200 °C from a 2.7% hydrazine–ammonia mixture. The Ti:N ratio of these films is approximately 1:1, and they contain no carbon or oxygen. These films exhibit the highest growth rates observed.


2020 ◽  
Author(s):  
Hyunchol Cho ◽  
Sung-Hoon Jung

Better TiN film quality such as lower roughness and higher step coverage is required in recent semiconductor devices as the semiconductor device is scaled down. In this study, highly conformal ALD TiN film with excellent step coverage was achieved by using variable-pressure deposition method. TiN film grown at low-pressure condition was more conformal and smoother than that grown at high-pressure condition, although step coverage value grown at low-pressure condition was worse than that grown at high-pressure condition. By optimizing low/high pressure two-step TiN growth condition, it was achieved that not only better roughness than that of pure high-pressure TiN, but also, better step coverage value than that of pure low-pressure TiN as well as than that of pure high-pressure TiN.


2019 ◽  
Vol 688 ◽  
pp. 137380 ◽  
Author(s):  
D. Edström ◽  
D.G. Sangiovanni ◽  
L. Hultman ◽  
I. Petrov ◽  
J.E. Greene ◽  
...  
Keyword(s):  

1995 ◽  
Vol 389 ◽  
Author(s):  
Hung Liao ◽  
Hannes Stippel ◽  
Krishna Reddy ◽  
Sam Geha ◽  
Kevin Brown ◽  
...  

ABSTRACTExperimental and simulation studies were conducted in an attempt to understand the effects of collimator life time on the Ti and TiN film growth rates and conformalities in sputter deposition processes. The Ti and TiN films were deposited with and without collimation. The hexagonal cells of the collimator used in this study have a 1:1 aspect ratio. A Monte Carlo based simulator was used to calculate the angular distributions of species exiting from a collimator cell and the percentage decrease in the rate of film growth as a function of the collimator life time. Then, a low pressure deposition process simulator, EVOLVE, was used to predict the conformalities of deposited films in contacts or vias, assuming that the films were uniformly deposited on the side-walls of collimator cells. We conclude that the loss in growth rate is largely due to the shrinkage in the cross sectional area of the collimator cell inlets. We arrive at this conclusion after comparing an estimated film thickness on the collimator side-walls with experimental measurements. With extended collimator usage, the predicted and experimental film profiles in contacts or vias show increasing bottom coverage and decreasing side-wall coverages.


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