High-rate a-Si:H and μc-Si:H Film Growth Studied by Advanced Plasma and in situ Film Diagnostics

2002 ◽  
Vol 715 ◽  
Author(s):  
W.M.M. Kessels ◽  
P.J. van den Oever ◽  
J.P.M. Hoefnagels ◽  
J. Hong ◽  
I.J. Houston ◽  
...  
Keyword(s):  
Film Growth ◽  
Film Studies ◽  
Interface Layer ◽  
Surface Reactivity ◽  
Attenuated Total Reflection ◽  
High Rate ◽  
High Deposition Rate ◽  
Basic Insight ◽  
Insight Into

AbstractPlasma and in situ film studies have been applied to the expanding thermal plasma to obtain basic insight into the deposition of a-Si:H and μc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals' surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.

scholarly journals Sputter Deposition of Semiconductor Superlattices for Thermoelectric Applications

1996 ◽  
Vol 450 ◽  
Author(s):  
Andrew V. Wagner ◽  
Ronald J. Foreman ◽  
Joseph C. Farmer ◽  
Troy W. Barbee
Keyword(s):  
Film Growth ◽  
Lead Telluride ◽  
Deposition Process ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
High Rate ◽  
Dramatic Improvement ◽  
High Deposition Rate ◽  
High Quality ◽  
Quantum Confined

ABSTRACTTheoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Study on the Growth of Crystalline Er2O3 Films on Si Substrates by RHEED Patterns

2011 ◽  
Vol 486 ◽  
pp. 163-166
Author(s):  
Yan Yan Zhu ◽  
Run Xu ◽  
Ze Bo Fang
Keyword(s):  
Film Growth ◽  
Interface Layer ◽  
High Energy ◽  
High Substrate Temperature ◽  
Initial Growth ◽  
High Energy Electron ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Oxidation Effect

Er2O3 films with good crystallinity have been achieved on an oxidized Si (111) surface by molecule beam epitaxy. The initial growth of Er2O3 films epitaxially grown on Si surfaces is investigated by in situ reflection high energy electron diffraction. An interface layer was formed at the very beginning of the growth of Er2O3 film on Si, which is supposed to be attributed to the Er atom catalytic oxidation effect. The results obtained indicate that with the film growth process continued, oxygen deficient Er oxide captures oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is insufficient at a high substrate temperature such as 700°C in our case.

scholarly journals The a-Si:H Growth Mechanism: Temperature Study of the SiH3 Surface Reactivity and the Surface Silicon Hydride Composition During Film Growth

2003 ◽  
Vol 762 ◽  
Author(s):  
W.M.M. Kessels ◽  
Y. Barrell ◽  
P.J. van den Oever ◽  
J.P.M. Hoefnagels ◽  
M.C.M. van de Sanden
Keyword(s):  
Substrate Temperature ◽  
Growth Mechanism ◽  
Film Growth ◽  
Experimental Studies ◽  
Surface Reactivity ◽  
Attenuated Total Reflection ◽  
Silicon Hydride ◽  
Time Resolved ◽  
Surface Hydrogen ◽  
Silicon Hydrides

AbstractWe report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450°C) using the time-resolved cavity ringdown technique. The silicon hydrides –SiHx on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from –SiH3 to =SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.

In Situ Xps Studies of the Deposition of Thin Films from Tetrakis(Dimethylamido)Titaniumorganometaluc Precursor for Diffusion Barriers

1993 ◽  
Vol 309 ◽  
Author(s):  
G. Ruhl ◽  
R. Rehmet ◽  
M. Knoživá ◽  
S. Vepřek
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Diffusion Barriers ◽  
High Rate ◽  
Feature Size ◽  
In Situ Xps ◽  
Minimum Feature Size ◽  
Organometallic Precursors ◽  
Xps Study

AbstractWith the decreasing minimum feature size of integrated microcircuits, a low-temperature, chlorine-free CVD process is needed for the deposition of TiN diffusion barriers. A problem during the thermal deposition of titanium nitride from organometallic precursors, such as tetrakis(dimethylamido)titanium, is the high content of carbon in the films. In situ XPS study reveals that most of the carbon is present as CHx inclusions with a smaller but not negligible amount of carbidic component. This can be avoided by using ammonia, but the high rate of the reaction in the gas phase makes the control of the film growth difficult. Most of the problems can be resolved when using hydrogen afterglow.

In situ investigation of growth of gold on crystalline TiO2 and amorphous Al2O3 substrates

2003 ◽  
Vol 795 ◽  
Author(s):  
L. Lauter ◽  
R. Abermann
Keyword(s):  
Film Growth ◽  
Gold Film ◽  
Interface Layer ◽  
Growth Stress ◽  
Island Growth ◽  
In Situ Investigation ◽  
Substrate Temperatures ◽  
Amorphous Al2o3 ◽  
Gold Coverage

ABSTRACTThe growth of thin gold films on highly crystalline TiO2 and amorphous Al2O3 substrates and its dependence on substrate temperature was investigated under UHV-conditions by in situ internal stress measurements. Deposition of gold on amorphous Al2O3 at substrate temperatures between 27°C and 300°C shows a stress vs. thickness curve which indicates island growth at first and the formation of a polycrystalline film at higher thickness. A comparable stress vs. thickness curve is found for the growth of gold on the highly crystalline TiO2 substrate at substrate temperatures below 200°C, again indicating island growth. At higher temperatures, however, a new tensile stress feature at low gold coverage is interpreted to indicate the formation of a strained interface layer. This strain in the gold film is eliminated after deposition of a few monolayers most likely through incorporation of dislocations and defects. The growth stress at higher film thickness is indicative of island film growth.

High Rate in situ YBa2Cu3O7 Film Growth Assisted by Liquid Phase

2004 ◽  
Vol 19 (4) ◽  
pp. 977-981 ◽  
Author(s):  
T. Ohnishi ◽  
J-U. Huh ◽  
R.H. Hammond ◽  
W. Jo
Keyword(s):  
Molecular Beam ◽  
Film Growth ◽  
Ybco Film ◽  
High Rate ◽  
Ex Situ ◽  
Activated Oxygen ◽  
System Pressure ◽  
Rate Processes ◽  
Very High

High-rate (10 nm/s) in situ YBa2Cu3O7 (YBCO) film growth was demonstrated by molecular beam epitaxy with electron beam co-evaporation at a system pressure of approximately 5 × 10-5 Torr. To explain the phase stability observed, it is suggested that activated oxygen is generated in the process. Growth of very good YBCO, with a Jc of more than 2 MA/cm2, is possible at this very high rate because the growth is in a liquid (Ba–Cu–O), which forms along with the YBCO epitaxy. This liquid seems essential for high Jc-YBCO film growth at very high in situ growth rates and may be essential for all high-rate processes, including postanneal ex situ processes.

Speeding up Film Deposition Rate: Its Effects on Microstructures of YBa2Cu3Oy Superconducting Thick Films

1999 ◽  
Vol 14 (4) ◽  
pp. 1204-1211 ◽  
Author(s):  
X. F. Zhang ◽  
H. H. Kung ◽  
S. R. Foltyn ◽  
Q. X. Jia ◽  
E. J. Peterson ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Film Growth ◽  
Lattice Mismatch ◽  
Film Deposition ◽  
High Rate ◽  
High Deposition Rate ◽  
Cation Disorder ◽  
Transmission Electron ◽  
Superconducting Thick Films ◽  
Film Deposition Rate

Two very different pulsed laser deposition rates, 192 and 6 Å/s, were used to produce 1 μm thick superconducting YBa2Cu3Ox (YBCO) films on (001) SrTiO3 single-crystal substrates at 790 °C. Transmission electron microscopy (TEM) was used to characterize and compare microstructures between the two films. It has been found that the high deposition rate led to a slight deviation from the expected epitaxial orientations, and extra stress was induced in the films by increased lattice mismatch between the films and the substrates. In addition, misoriented YBCO grains were formed in the high-rate films after a thickness of about 150 nm. Postannealing in oxygen had no visible influence on these defects, although superconducting properties were improved significantly. In contrast to the high-rate films, overall epitaxial orientations have been formed in the low-rate films, and no misoriented YBCO grains were found. However, variations in lattice parameters and columnar voids were observed, although their existence apparently does not have considerable influence on superconducting current density (Jc). Cation disorder was observed in both films. A two-step film growth mechanism is concluded which is responsible for the formation of some defects in the high-deposition rate films.

An in Situ-Formed Mosaic Li7Sn3/LiF Interface Layer for High-Rate and Long-Life Garnet-Based Lithium Metal Batteries

2019 ◽  
Vol 11 (38) ◽  
pp. 34939-34947 ◽  
Author(s):  
Bingkun Hu ◽  
Wei Yu ◽  
Bingqing Xu ◽  
Xue Zhang ◽  
Ting Liu ◽  
...  
Keyword(s):  
Interface Layer ◽  
High Rate ◽  
Lithium Metal ◽  
Lithium Metal Batteries ◽  
Long Life

In situ Photoemission Study on Initial Growth of Er2O3 Films on Si(001)

2008 ◽  
Vol 373-374 ◽  
pp. 625-628 ◽  
Author(s):  
Y.Y. Zhu ◽  
Z.B. Fang ◽  
Shu Chen ◽  
C. Liao ◽  
Z.M. Jiang
Keyword(s):  
Growth Process ◽  
Film Growth ◽  
Interface Layer ◽  
High Substrate Temperature ◽  
Photoemission Spectroscopy ◽  
Initial Growth ◽  
Photoemission Study ◽  
Oxidation Effect ◽  
Synchrotron Radiation Photoemission

Synchrotron radiation photoemission spectroscopy was used to study the initial growth of Er2O3 films on Si in O2 pressures of 7×10-6 Torr. An interface layer was observed at the initial growth of Er2O3 film on Si, which is supposed to be attributed to the effect of the Er atom catalytic oxidation effect. With the film growth process continued, oxygen deficient Er oxide will capture oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is a little insufficient at a high substrate temperature.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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