Influence of oxygen partial pressure on microstructure, optical properties, residual stress and laser induced damage threshold of amorphous HfO2 thin films

2019 ◽  
Vol 771 ◽  
pp. 373-381 ◽  
Author(s):  
S. Jena ◽  
R.B. Tokas ◽  
S. Tripathi ◽  
K.D. Rao ◽  
D.V. Udupa ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Damage Threshold ◽  
Laser Induced Damage

Effect of oxygen partial pressure on the structural and optical properties of ion beam sputtered TiO2 thin films

2016 ◽  
Vol 619 ◽  
pp. 86-90 ◽  
Author(s):  
Firdous A. Tantray ◽  
Arpana Agrawal ◽  
Mukul Gupta ◽  
Joseph T. Andrews ◽  
Pratima Sen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
Effect Of Oxygen

scholarly journals Influence of the oxygen partial pressure on the growth and optical properties of RF-sputtered anatase TiO2 thin films

2017 ◽  
Vol 7 ◽  
pp. 3349-3352 ◽  
Author(s):  
A.R. Grayeli Korpi ◽  
Sahare Rezaee ◽  
C. Luna ◽  
Ş. Ţălu ◽  
A. Arman ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Anatase Tio2 ◽  
Tio2 Thin Films

Influences of deposition rate and oxygen partial pressure on residual stress and microstructure of YSZ thin films

2009 ◽  
Vol 517 (15) ◽  
pp. 4295-4298 ◽  
Author(s):  
Qiling Xiao ◽  
Hongbo He ◽  
Shuying Shao ◽  
Jianda Shao ◽  
Zhengxiu Fan
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Deposition Rate

Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1233-1236
Author(s):  
Yasuhiro Shigetoshi ◽  
Susumu Tsukimoto ◽  
Hidehisa Takeda ◽  
Kazuhiro Ito ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Pressure Of Oxygen ◽  
Electrical And Optical Properties ◽  
Sputtering Deposition

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

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