Influence of oxygen partial pressure on the optical properties of electron beam evaporated vanadium pentoxide thin films

Ga2O3 thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10−2 Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga2O3 films was analyzed using sophisticated techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet-visible spectroscopy and a laser-induced damage test system. The correlation between the oxygen partial pressure and the film’s properties in optics and materials were investigated. XRD and Raman revealed that all films were amorphous in spite of applying a varying oxygen partial pressure. With the change of oxygen partial pressure, XPS data indicated that the content of oxygen in the Ga2O3 films could be broadly modulable. As a result, a changeable refractive index of the Ga2O3 film is realizable and a variable blue-shift of absorption edges in transmittance spectra of the films is achievable. Moreover, the damage threshold value varied from 0.41 to 7.51 J/cm2 according to the rise of oxygen partial pressure. These results demonstrated that the optical properties of Ga2O3 film can be broadly tunable by controlling the oxygen content in the film.

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Effects of oxygen partial pressure and substrate temperature on the structure and optical properties of MgxZn1−xO thin films prepared by magnetron sputtering

Applied Surface Science ◽

10.1016/j.apsusc.2011.02.076 ◽

2011 ◽

Vol 257 (15) ◽

pp. 6554-6559 ◽

Cited By ~ 5

Author(s):

Xinghua Zhang ◽

Zunming Lu ◽

Fanbin Meng ◽

Yongzhong Wang ◽

Ying Li ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Oxygen Partial Pressure ◽

Partial Pressure

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Oxygen Partial Pressure Influenced Structural, Morphological and Optical Properties of Nanocrystalline ZnO Thin Films Formed by RF Magnetron Sputtering

10.1063/1.3643612 ◽

2011 ◽

Cited By ~ 1

Author(s):

R. Subba Reddy ◽

A. Sreedhar ◽

M. Hariprasad Reddy ◽

P. Kondaiah ◽

S. Uthanna ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Rf Magnetron Sputtering ◽

Zno Thin Films

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Effect of oxygen partial pressure on the structural and optical properties of ion beam sputtered TiO2 thin films

Thin Solid Films ◽

10.1016/j.tsf.2016.10.020 ◽

2016 ◽

Vol 619 ◽

pp. 86-90 ◽

Cited By ~ 8

Author(s):

Firdous A. Tantray ◽

Arpana Agrawal ◽

Mukul Gupta ◽

Joseph T. Andrews ◽

Pratima Sen

Keyword(s):

Thin Films ◽

Optical Properties ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Ion Beam ◽

Structural And Optical Properties ◽

Tio2 Thin Films ◽

Effect Of Oxygen

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Effect of substrate temperature and oxygen partial pressure on structural and optical properties of Mg doped ZnO thin films

Ceramics International ◽

10.1016/j.ceramint.2015.01.049 ◽

2015 ◽

Vol 41 (5) ◽

pp. 6269-6273 ◽

Cited By ~ 20

Author(s):

Vanita Devi ◽

Manish Kumar ◽

Ravindra Kumar ◽

B.C. Joshi

Keyword(s):

Thin Films ◽

Optical Properties ◽

Substrate Temperature ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Zno Thin Films ◽

Structural And Optical Properties ◽

Doped Zno ◽

Mg Doped

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Influence of the oxygen partial pressure on the growth and optical properties of RF-sputtered anatase TiO2 thin films

Results in Physics ◽

10.1016/j.rinp.2017.08.018 ◽

2017 ◽

Vol 7 ◽

pp. 3349-3352 ◽

Cited By ~ 22

Author(s):

A.R. Grayeli Korpi ◽

Sahare Rezaee ◽

C. Luna ◽

Ş. Ţălu ◽

A. Arman ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Anatase Tio2 ◽

Tio2 Thin Films

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Effects of nitrogen and oxygen partial pressure on the structural and optical properties of ZnO:N thin films prepared by magnetron sputtering

Materials Letters ◽

10.1016/j.matlet.2015.11.105 ◽

2016 ◽

Vol 165 ◽

pp. 123-126 ◽

Cited By ~ 12

Author(s):

Huiping Lu ◽

Peipei Zhou ◽

Haonan Liu ◽

Linao Zhang ◽

Yang Yu ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Structural And Optical Properties

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Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.561-565.1233 ◽

2007 ◽

Vol 561-565 ◽

pp. 1233-1236

Author(s):

Yasuhiro Shigetoshi ◽

Susumu Tsukimoto ◽

Hidehisa Takeda ◽

Kazuhiro Ito ◽

Masanori Murakami

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Optical Properties ◽

Electrical Properties ◽

Substrate Temperature ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Partial Pressure Of Oxygen ◽

Electrical And Optical Properties ◽

Sputtering Deposition

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

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