Photovoltaic conversion enhancement of a transparent NiO/CdO/ZnO pn junction device with a CdO transition layer

2021 ◽  
Vol 862 ◽  
pp. 158430
Author(s):  
Peipei Wang ◽  
Jiaqi Pan ◽  
Jie Mei ◽  
Qi Yu ◽  
Panhong Wang ◽  
...  
Keyword(s):  
Transition Layer ◽  
Photovoltaic Conversion ◽  
Pn Junction ◽  
Junction Device

Conductance Imaging of the Depletion Region of Biased Silicon PN Junction Device

2001 ◽  
Vol 669 ◽  
Author(s):  
Jeong Young Park ◽  
R. J. Phaneuf ◽  
E. D. Williams
Keyword(s):  
Tunneling Current ◽  
Current Mode ◽  
Depletion Region ◽  
Constant Current ◽  
Band Bending ◽  
Pn Junction ◽  
Junction Device ◽  
Modulation Signal ◽  
Passivated Silicon ◽  
Lock In

ABSTRACTSimultaneous conductance imaging and constant current mode STM imaging have been used to delineate Si pn junction arrays over a range of reverse bias conditions. Conductance has been obtained by adding a modulation signal to voltages applied in the p and n regions of a model device, and by measuring the modulation signal of the tunneling current with a lock-in amplifier. Both constant current and conductance imaging ofthe electrically different regions (n, p, and depletion zone) show a pronounced dependence on applied pn junction bias. The conductance contrast is mainly due to electrically different behaviors of metal-gap-semiconductor junction which are determined by the tip-induced band bending of the oxide-passivated silicon surface.

The Cu2O/CuO/SnO2 transparent pn junction film device towards photovoltaic enhancement with Cu2+ self-oxidation transition layer

2021 ◽  
Vol 56 (9) ◽  
pp. 5736-5747
Author(s):  
Qi Yu ◽  
Jiaqi Pan ◽  
Jie Mei ◽  
Zhanfen Chen ◽  
Panhong Wang ◽  
...  
Keyword(s):  
Transition Layer ◽  
Pn Junction
Sign in / Sign up

Export Citation Format

Share Document