The current work proposed the application of methylammonium lead iodide (MAPbI3) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI3(rods)-silver (Ag/MAPbI3/Ag) based photo-resistor was fabricated. The MAPbI3 microrods were prepared by adopting a facile low-temperature solution process, and then an independent MAPbI3 microrod was employed to the two-terminal device. The morphological and elemental compositional studies of the fabricated MAPbI3 microrods were performed using FESEM and EDS, respectively. The voltage-dependent electrical behavior and electronic conduction mechanisms of the fabricated photo-resistors were studied using current–voltage (I–V) characteristics. Different conduction mechanisms were observed at different voltage ranges in dark and under illumination. In dark conditions, the conduction behavior was dominated by typical trap-controlled charge transport mechanisms within the investigated voltage range. However, under illumination, the carrier transport is dominated by the current photogenerated mechanism. This study could extend the promising application of perovskite microrods in photo-induced resistor switches and beyond.
On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage
