Structural analytical and electrical conduction mechanisms of 2,7,12,17-tetra-tert-butyl-5,10,15,20-tetraaza-21H,23H-porphine nanostructure films

2021 ◽  
Author(s):  
Ameen A. Al-Zubaidi ◽  
Amel Abdallah Ahmed Elfaki ◽  
S. A. Al-Ghamdi ◽  
A. A. A. Darwish
Keyword(s):  
Electrical Conduction ◽  
Tert Butyl ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms

Substitution induced magnetic phase transitions and related electrical conduction mechanisms in LaFeO3 nanoparticle

2019 ◽  
Vol 126 (6) ◽  
pp. 064104 ◽  
Author(s):  
T. Lakshmana Rao ◽  
M. K. Pradhan ◽  
U. K. Goutam ◽  
V. Siruguri ◽  
V. R. Reddy ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Electrical Conduction ◽  
Magnetic Phase ◽  
Magnetic Phase Transitions ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms

scholarly journals Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

2020 ◽  
Vol 80 (10) ◽  
Author(s):  
S. Bhattarai ◽  
R. Panth ◽  
W.-Z. Wei ◽  
H. Mei ◽  
D.-M. Mei ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Conduction ◽  
High Purity ◽  
Localization Length ◽  
Rare Event ◽  
Conduction Mechanisms ◽  
Ge Detector ◽  
Electrical Conduction Mechanisms ◽  
P Type ◽  
Surface Leakage

AbstractFor the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

Electrical conduction mechanisms of metal nanoclusters embedded in an amorphous Al2O3 matrix

2007 ◽  
Vol 515 (16) ◽  
pp. 6324-6327 ◽  
Author(s):  
A. Crunteanu ◽  
F. Dumas-Bouchiat ◽  
C. Champeaux ◽  
A. Catherinot ◽  
P. Blondy
Keyword(s):  
Electrical Conduction ◽  
Metal Nanoclusters ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms ◽  
Amorphous Al2o3 ◽  
Al2o3 Matrix

scholarly journals The Film Thickness Effect on Electrical Conduction Mechanisms and Characteristics of the Ni–Cr Thin Film Resistor

2016 ◽  
Vol 4 (6) ◽  
pp. 441-444 ◽  
Author(s):  
Nai-Chuan Chuang ◽  
Jyi-Tsong Lin ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Electrical Conduction ◽  
Thickness Effect ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms
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