Dynamics of melt–crystal interface and thermal stresses in rotational Bridgman crystal growth process

2004 ◽  
Vol 266 (1-3) ◽  
pp. 216-223 ◽  
Author(s):  
Ronghui Ma ◽  
Hui Zhang ◽  
David J. Larson ◽  
Krishna C. Mandal
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Ying-Yang Teng ◽  
Jyh-Chen Chen ◽  
Chung-Wei Lu ◽  
Cheng-Chuan Huang ◽  
Wan-Ting Wun ◽  
...  

We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall. During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation. There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex.


1991 ◽  
Author(s):  
Archibald L. Fripp ◽  
W. J. Debnam ◽  
Glenn A. Woodell ◽  
Robert F. Berry ◽  
Richard T. Simchick ◽  
...  

2004 ◽  
Vol 266 (1-3) ◽  
pp. 175-181 ◽  
Author(s):  
M. Margulies ◽  
P. Witomski ◽  
T. Duffar

2001 ◽  
Vol 34 (25) ◽  
pp. 517-522
Author(s):  
Paul Sonda ◽  
Andrew Yeckel ◽  
Prodromos Daoutidis ◽  
Jeffrey J. Derby

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