Optimal Magnetic Graphite Heater Design for Impurity Control in Single-Crystal Si Grower Using Crystal Growth Simulation

In this paper, we report a successfully modified single-crystal Si growth furnace for impurity control. Four types of arbitrary magnetic heater (AMGH) systems with 3, 4, 5, and poly parts were designed in a coil shape and analyzed using crystal growth simulation. The concentration of oxygen impurities in single-crystal Si ingots was compared among the designed AMGHs and a normal graphite heater (NGH). The designed AMGHs were confirmed to be able to control turbulence and convection in a molten state, which created a vortex that influenced the oxygen direction near the melt–crystal interface. It was confirmed that replacing NGH with AMGHs resulted in a reduction in the average oxygen concentration at the Si melt–crystal interface by approximately 4.8%.

Non-Stationary Model of Cerebral Oxygen Transport with Unknown Sources

An inverse problem for a system of equations modeling oxygen transport in the brain is studied. The problem consists of finding the right-hand side of the equation for the blood oxygen transport, which is a linear combination of given functionals describing the average oxygen concentration in the neighborhoods of the ends of arterioles and venules. The overdetermination condition is determined by the values of these functionals evaluated on the solution. The unique solvability of the problem is proven without any smallness assumptions on the model parameters.

Analysis of the Effect of a Vertical Magnetic Field on Melt Convection and Oxygen Transport During Directional Solidification of Multi-Crystalline Silicon by Numerical Simulation

Melt convection during the directional solidification process of multi-crystalline silicon plays a critical role in the transport of impurities. The utilization of a static magnetic field is an effective way to control the melt convection pattern. Studying the effect of the Lorentz force induced by the vertical magnetic field (VMF) on the melt convection of silicon in detail is beneficial to optimize the magnetic field parameters in the production process. Based on the numerical simulation method of multi-physics coupling, this paper explores the effects of different VMF intensities on the convection of silicon melt and the transport of oxygen in the melt during the directional solidification of polycrystalline silicon. The results show that in the first 125 minutes of the crystallization stage, the melt convection velocity is affected significantly by the magnetic field intensities. When different convection circulations are present in the silicon melt, the upper circulation easily transports oxygen to the furnace atmosphere, and the subjacent circulation easily lead to the retention and accumulation of oxygen. Enhancing the VMF intensity to a certain extent can reduce the size of the oxygen retention region in the silicon melt, and the time of the first disappearance of the subjacent circulation near the sidewall of the crucible is shortened. Then the average oxygen concentration in the silicon melt can be reduced. However, a larger vertical magnetic field intensity can result in greater average oxygen concentration in the oxygen retention region.

Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process

We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall. During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation. There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex.

Oxygen Poisoning in Drosophila

Fruit flies live longer at the partial pressure of oxygen found in air than at either larger or smaller partial pressures. Flies exposed to 1 atm of oxygen for 8 hr every day do not recover completely in the remaining 16 hr. In general, intermittent exposures to 1 atm of oxygen are better tolerated than continuous exposure to the same average oxygen concentration per day, but exposures to higher pressures of 2–5 atm of oxygen for as little as a half hour every two days markedly shorten the life-span. Older flies consume more oxygen per minute and are more sensitive to oxygen poisoning than young flies, and the rate of dying in 6 atm of O2, or the reciprocal of the survival time, is a linear function of the age. The oxygen pressure-time curve can be well expressed by the general empirical equation (POO2)2 x time = 120 where P is in atmosphere and survival time in hours. The progress of oxygen poisoning appears to be linear with time rather than exponential.