Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

2006 ◽  
Vol 295 (2) ◽  
pp. 103-107 ◽  
Author(s):  
Wu-Yih Uen ◽  
Zhen-Yu Li ◽  
Yen-Chin Huang ◽  
Meng-Chu Chen ◽  
Tsun-Neng Yang ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Gaas On Si

Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets

1995 ◽  
Vol 379 ◽  
Author(s):  
Christos Papavassiliou ◽  
G. Constantinidis ◽  
N. Kornilios ◽  
A. Georgakilas ◽  
E. LÖchterman ◽  
...  
Keyword(s):  
Misorientation Angle ◽  
Defect Density ◽  
Initial Study ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Mbe Growth ◽  
Gaas Mesfet ◽  
Gaas On Si ◽  
Dc Characteristics

ABSTRACTA systematic experimental investigation has been undertaken for the optimization of the wafer parameters and processing for silicon wafers intended for use as substrates for MBE growth, with emphasis on heteroepitaxial growth of GaAs-on- Si. Within this investigation, results are presented of an initial study focused on the optimization of the magnitude of the misorientation angle towards a <110> direction for the growth of GaAs on (001) Si wafers. This angle controls the structure of the stepped (001)Si surface and can influence the defect density and surface smoothness of the GaAs-on-Si layers. Silicon substrates misoriented from 0 deg. up to 9 deg. were cut to specification and subsequently used for the epitaxial growth of GaAs MESFET structures. MESFETs were fabricated and their dc and RF characteristics compared. The resistivity of the GaAs-on-Si buffer layers was evaluated and correlated to the results from device characterization. This work presents the effects of the magnitude of the angle of misorientation in the range from 0 to 9 deg.

Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering

2015 ◽  
Vol 1741 ◽  
Author(s):  
Tomoaki Ide ◽  
Koichi Matsushima ◽  
Ryota Shimizu ◽  
Daisuke Yamashita ◽  
Hynwoong Seo ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Crystal Nucleation ◽  
Zno Films ◽  
Growth Stages ◽  
Initial Growth ◽  
Height Distribution ◽  
Heteroepitaxial Growth ◽  
Distribution Profile

ABSTRACTEffects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of “nitrogen mediated crystallization (NMC) method”, where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

Microwave performance of GaAs-on-Si MESFETs with Si buffer layers

1993 ◽  
Vol 40 (3) ◽  
pp. 507-512 ◽  
Author(s):  
A. Georgakilas ◽  
G. Halkias ◽  
A. Christou ◽  
C. Papavassiliou ◽  
G. Perantinos ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Gaas On Si

Initial Stages of GaAs Epitaxy on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
O. K. Biegelsen ◽  
F. A. Ponce ◽  
B. S. Krusor ◽  
J. C. Tramontana ◽  
R. D. Yingling ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Nucleation And Growth ◽  
Heteroepitaxial Growth ◽  
Island Growth ◽  
Passivating Layer ◽  
Gaas On Si ◽  
Graded Thickness ◽  
Substrate Temperatures

AbstractThe initial stages of heteroepitaxial growth of GaAs on Si have been observed using a technique of graded-thickness sample deposition. We find that an initial uniform passivating layer is grown, followed by three-dimensional nucleation determined by Ga diffusion and clustering, followed in turn by an interfacial reaction limited island growth mechanism. Results for various substrate temperatures and substrate orientations are consistent with the simple models of nucleation and growth.

Laser Ablated Buffer Layers for YBCO-Tape Conductors

1998 ◽  
Vol 526 ◽  
Author(s):  
B. Holzapfel ◽  
V. Betz ◽  
M.A. Arranz ◽  
N. Reger ◽  
L. Schultz
Keyword(s):  
Room Temperature ◽  
Boundary Diffusion ◽  
Ion Beam ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
Deposition Parameters ◽  
Oriented Parallel ◽  
Ybco Tape ◽  
Deposition Conditions

AbstractBiaxially oriented yttria stabilized zirconia (YSZ) and Pr6O11 buffer layers were grown at room temperature by Ion-Beam Assisted Laser Deposition (IBALD) on metal substrates. Dependent on deposition parameters, IBALD grown films showed in-plane orientations of about 10° FWHM (full-width at half maximum) for both systems. In contrast to the YSZ system, where best in plane alignment is found for a [111] direction oriented parallel to the ion beam, the Pr6O11 system shows best in-plane alignment at nearly gracing incidence of the ion beam. An additional thin intermediate CeO2 layer improves the heteroepitaxial growth of YBCO on highly biaxially oriented YSZ films. Pulsed Laser Deposition (PLD) was also used to grow epitaxial CeO2 buffer layers directly on biaxially textured Ni-tapes. SIMS investigations showed an interdiffusion zone of about 0.5μm at standard deposition conditions, but no enhanced grain boundary diffusion could be observed.

Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers

1990 ◽  
Vol 106 (2-3) ◽  
pp. 421-425 ◽  
Author(s):  
Norio Hayafuji ◽  
Motoharu Miyashita ◽  
Hisao Kumabe ◽  
Toshio Murotani
Keyword(s):  
Large Scale ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Atomic Layer Epitaxy ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Initial Buffer
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