The epitaxial growth of the LaCaMnO thin films with the CMR effects prepared by a new method: Precursor film sintering

2006 ◽  
Vol 296 (2) ◽  
pp. 207-212 ◽  
Author(s):  
Hui Liu ◽  
Ying Luo ◽  
Ming Li
1992 ◽  
Vol 263 ◽  
Author(s):  
S. Mantl ◽  
H. L. Bay ◽  
Ch. Dieker

ABSTRACTA new method for the growth of epitaxial compound thin films, termed allotaxy, is proposed and the fabrication of the silicide heterostructure Si/CoSi2/Si(100) Is demonstrated. Allotaxy is a two. step process. In our example, Si is deposited on a heated Si substrate and then Co is coevaporated at varying rates such that a peaked Co-depth profile in Si is generated. At appropriate deposition conditions CoSi2 precipitates embedded in single crystalline Si are formed. These precipitates coarsen and coalesce into a buried, uniform, epitaxial CoSi2 layer during the second processing step, a high temperature anneal. Allotaxy should allow not only the epitaxial growth of silicides but also that of other binary, precipitates forming systems.


1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).


2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).


2000 ◽  
Vol 18 (2) ◽  
pp. 536-542 ◽  
Author(s):  
Tomoko Wake ◽  
Koichiro Saiki ◽  
Atsushi Koma

1999 ◽  
Vol 85 (8) ◽  
pp. 4800-4802 ◽  
Author(s):  
J. Fontcuberta ◽  
M. Bibes ◽  
B. Martı́nez ◽  
V. Trtik ◽  
C. Ferrater ◽  
...  
Keyword(s):  

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  

1978 ◽  
Vol 45 ◽  
pp. 393-398 ◽  
Author(s):  
Makoto Ishida ◽  
Shinji Tsuji ◽  
Katsutaka Kimura ◽  
Hiroyuki Matsunami ◽  
Tetsuro Tanaka
Keyword(s):  

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