The epitaxial growth of the PrCaSrMnO and LaCaMnO/PrCaSrMnO/LaCaMnO multilayer thin films with CMR effects prepared by a new method: Precursor Film Sintering

2007 ◽  
Vol 395 (1-2) ◽  
pp. 33-38 ◽  
Author(s):  
Hui Liu ◽  
Ying Luo ◽  
Ming Li
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
New Method ◽  
Precursor Film ◽  
Multilayer Thin Films

Second Order Nonlinear Optical Thin Films Fabricated from Electric Field-Assisted Electrostatic Self-Assembled Monolayer Method

1999 ◽  
Vol 561 ◽  
Author(s):  
Y. Liu ◽  
R.O. Claus ◽  
D. Marciu ◽  
C. Figura ◽  
J.R. Heflin
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Nonlinear Optical ◽  
Second Harmonic ◽  
New Method ◽  
Multilayer Thin Films ◽  
Self Assembled Monolayer ◽  
Harmonic Intensity ◽  
Self Assembled ◽  
First Time

ABSTRACTA new method for the build-up of non-centrosymmetric multilayer thin films has been developed for the first time using an electric field-assisted electrostatic self-assembled monolayer (EF-ESAM) technique. An increase by 116% of the second-harmonic intensity of the films has been observed in comparison with that of ESAM film.

Epitaxial growth of ZnS:Mn/Y2O3/ZnS/Si(100) multilayer thin films

1988 ◽  
Vol 33-34 ◽  
pp. 677-684
Author(s):  
Yoichiro Nakanishi ◽  
Koji Kimura ◽  
Goro Shimaoka ◽  
Masami Ogita
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Multilayer Thin Films

scholarly journals Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Daoyou Guo ◽  
Yuehua An ◽  
Wei Cui ◽  
Yusong Zhi ◽  
Xiaolong Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Epitaxial Growth ◽  
Multilayer Thin Films

Allotaxy: A New Method for Epitaxial Growth of Compound Thin Films

1992 ◽  
Vol 263 ◽  
Author(s):  
S. Mantl ◽  
H. L. Bay ◽  
Ch. Dieker
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Depth Profile ◽  
New Method ◽  
Si Substrate ◽  
Step Process ◽  
High Temperature Anneal ◽  
Processing Step ◽  
Deposition Conditions

ABSTRACTA new method for the growth of epitaxial compound thin films, termed allotaxy, is proposed and the fabrication of the silicide heterostructure Si/CoSi2/Si(100) Is demonstrated. Allotaxy is a two. step process. In our example, Si is deposited on a heated Si substrate and then Co is coevaporated at varying rates such that a peaked Co-depth profile in Si is generated. At appropriate deposition conditions CoSi2 precipitates embedded in single crystalline Si are formed. These precipitates coarsen and coalesce into a buried, uniform, epitaxial CoSi2 layer during the second processing step, a high temperature anneal. Allotaxy should allow not only the epitaxial growth of silicides but also that of other binary, precipitates forming systems.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Progressive Debonding of Multilayer Interconnect Structures

1997 ◽  
Vol 473 ◽  
Author(s):  
Michael Lane ◽  
Robert Ware ◽  
Steven Voss ◽  
Qing Ma ◽  
Harry Fujimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Crack Growth ◽  
Driving Force ◽  
Adhesion Energy ◽  
Time Dependent ◽  
Multilayer Thin Films ◽  
Processing Conditions ◽  
Interface Morphology ◽  
Entire Sample ◽  
Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

Sign in / Sign up

Export Citation Format

Share Document