Growth of cubic InN films with high phase purity by pulsed laser deposition

2009 ◽  
Vol 311 (11) ◽  
pp. 3130-3132 ◽  
Author(s):  
R. Ohba ◽  
K. Mitamura ◽  
K. Shimomoto ◽  
T. Fujii ◽  
S. Kawano ◽  
...  
2000 ◽  
Vol 655 ◽  
Author(s):  
Takeshi Yoshimura ◽  
Susan Trolier-McKinstry

Abstract(1°x)Pb(Yb1/2Nb1/2)O3划xPbTiO3 (PYbN-PT, x=0.5) epitaxial films were grown on (001)SrRuO3/(001)LaAlO3 and (111)SrRuO3/(111)SrTiO3 substrates by pulsed laser deposition. (001)PYbN-PT epitaxial films with high phase purity and good crystalline quality were obtained for a wide range of deposition rates (60-90 nm/min) and temperatures (620-680 °C). (111)PYbN-PT films were also obtained at temperatures in the range of 600 °C to 620 °C. The ferroelectric and piezoelectric properties were investigated on both (001) and (111) PYbN-PT films. The remanent polarizations of (001)PYbN-PT and (111)PYbN-PT films were as high as 34 μC/cm2 and 26 μC/cm2, respectively. On (001)PYbN-PT films with a thickness of 900 nm, an e31 coefficient of -13 C/m2 and an aging rate of 2.5% per decade were observed.


Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.


1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


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