Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy

AbstractEnsembles of homogeneous self-assembled quantum dots (QDs) and nanoholes are fabricated using molecular beam epitaxy in combination with atomically precise in situ etching. Self-assembled InAs QDs with height fluctuations of ±5% were grown using a very low indium growth rate on GaAs (001) substrate. If these dots are capped with GaAs at low temperature, strong room temperature emission at 1.3 νm with a linewidth of 21 meV from the islands is observed. Subsequently, we fabricate homogeneous arrays of nanoholes by in situ etching the GaAs surface of the capped InAs QDs with AsBr3. The depths of the nanoholes can be tuned over a range of 1-6 nm depending on the nominal etching depth and the initial capping layer thickness. We appoint the formation of nanoholes to a pronounced selectivity of the AsBr3 to local strain fields. The holes can be filled with InAs again such that an atomically flat surface is recovered. QDs in the second layer preferentially form at those sites, where the holes were initially created. Growth conditions for the second InAs layer can be chosen in such a way that lateral QD molecules form on a flat surface.

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Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate

Journal of Luminescence ◽

10.1016/j.jlumin.2011.08.013 ◽

2012 ◽

Vol 132 (2) ◽

pp. 289-292 ◽

Cited By ~ 8

Author(s):

F. Saidi ◽

L. Bouzaïene ◽

L. Sfaxi ◽

H. Maaref

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Growth Conditions ◽

Inas Quantum Dots

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Effects of growth interruption during the formation of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy

Microelectronics Journal ◽

10.1016/s0026-2692(03)00061-2 ◽

2003 ◽

Vol 34 (5-8) ◽

pp. 611-613 ◽

Cited By ~ 4

Author(s):

K. Iizuka ◽

K. Mori ◽

T. Suzuki

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Growth Interruption ◽

Self Assembled

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InAs self‐assembled quantum dots on InP by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.116122 ◽

1996 ◽

Vol 68 (7) ◽

pp. 991-993 ◽

Cited By ~ 150

Author(s):

S. Fafard ◽

Z. Wasilewski ◽

J. McCaffrey ◽

S. Raymond ◽

S. Charbonneau

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Self Assembled

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Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1306633 ◽

2000 ◽

Vol 77 (6) ◽

pp. 809-811 ◽

Cited By ~ 73

Author(s):

E. Martinez-Guerrero ◽

C. Adelmann ◽

F. Chabuel ◽

J. Simon ◽

N. T. Pelekanos ◽

...

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Zinc Blende ◽

Self Assembled

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Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

International Journal of Spectroscopy ◽

10.1155/2011/527642 ◽

2011 ◽

Vol 2011 ◽

pp. 1-5

Author(s):

Faouzi Saidi ◽

Mouna Bennour ◽

Lotfi Bouzaïene ◽

Larbi Sfaxi ◽

Hassen Maaref

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Growth Conditions ◽

High Energy ◽

Biaxial Strain ◽

High Energy Electron ◽

Inas Quantum Dots ◽

Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

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