Effect of crucible and crystal rotations on the convexity and the thermal stress in large size sapphire crystals during Czochralski growth

2017 ◽  
Vol 468 ◽  
pp. 514-525 ◽  
Author(s):  
Tran Phu Nguyen ◽  
Yao-Te Hsieh ◽  
Jyh-Chen Chen ◽  
Chieh Hu ◽  
Huy Bich Nguyen
Keyword(s):  
Thermal Stress ◽  
Czochralski Growth ◽  
Large Size

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

CrystEngComm ◽  
2021 ◽  
Vol 23 (39) ◽  
pp. 6967-6976
Author(s):  
Mahboobeh Saadatirad ◽  
Mohammad Hossein Tavakoli ◽  
Hossein Khodamoradi ◽  
Seyedeh Razieh Masharian
Keyword(s):  
Thermal Stress ◽  
Rotation Rate ◽  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation ◽  
Crystal Interface

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

Analysis to Reduce Thermal Stress in Oxide Single Crystal During Czochralski Growth

2004 ◽  
Author(s):  
Shigeki Hirasawa ◽  
Hiroyuki Ishibashi ◽  
Kazuhisa Kurashige ◽  
Akihiro Gunji
Keyword(s):  
Heat Transfer ◽  
Thermal Stress ◽  
Temperature Distribution ◽  
Thermal Radiation ◽  
Single Crystal ◽  
Radiation Heat Transfer ◽  
Heat Transfer Analysis ◽  
Czochralski Growth ◽  
Radiation Heat ◽  
Radial Temperature

Temperature distributions and thermal stress distributions in a semi-transparent GSO crystal during Czochralski (CZ) single crystal growth were numerically investigated by thermal radiation heat transfer analysis and anisotropy stress analysis. As GSO has special optical properties, such as semi-transparency at a wavelength shorter than 4.5 μm, thermal radiation heat transfer was calculated by the Monte Carlo method. These calculations showed that thermal stress is caused by the radial temperature distribution on the outside of the upper part of the crystal. To reduce this temperature distribution, the following three manufacturing conditions were found to be effective: use a sharp taper angle of the crystal, install a lid to the top of the insulator, and install a ring around the tapered part of the crystal.

scholarly journals Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal

Materials ◽  
2020 ◽  
Vol 13 (23) ◽  
pp. 5553
Author(s):  
Yue Yu ◽  
Botao Liu ◽  
Xia Tang ◽  
Sheng Liu ◽  
Bing Gao
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Heat Exchange ◽  
Single Crystal ◽  
Numerical Experiments ◽  
Radial Temperature Gradient ◽  
Radial Temperature ◽  
Large Size ◽  
Sublimation Growth

To reduce the thermal stress during the sublimation growth of 45 mm AlN single crystal, a tungsten sink was put on the top of the crucible lid. Numerical experiments showed that the radial temperature gradient was reduced due to the homogenization effect on temperature as a result of the sink. Therefore, this simple tungsten sink method has the potential to grow large-size AlN ingots with fewer cracks. It also reveals that enhancing the heat exchange of the crucible lid is an effective way to improve the quality of crystal growth.

Large Size Czochralski Growth and Scintillation Properties of

2016 ◽  
Vol 63 (2) ◽  
pp. 443-447 ◽  
Author(s):  
Kei Kamada ◽  
Yasuhiro Shoji ◽  
Vladimir V. Kochurikhin ◽  
Aya Nagura ◽  
Satoshi Okumura ◽  
...  
Keyword(s):  
Czochralski Growth ◽  
Large Size

Thermal stress analysis of silicon bulk single crystal during Czochralski growth

1992 ◽  
Vol 125 (1-2) ◽  
pp. 102-111 ◽  
Author(s):  
N. Miyazaki ◽  
H. Uchida ◽  
T. Munakata ◽  
K. Fujioka ◽  
Y. Sugino
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Stress Analysis ◽  
Bulk Single Crystal ◽  
Czochralski Growth ◽  
Thermal Stress Analysis ◽  
Silicon Bulk

A Semianalytical Thermal Stress Model for the Czochralski Growth of Type III-V Compounds

2006 ◽  
Vol 66 (5) ◽  
pp. 1533-1562 ◽  
Author(s):  
C. Sean Bohun ◽  
Huaxiong Huang ◽  
Ian Frigaard ◽  
Shuqing Liang
Keyword(s):  
Thermal Stress ◽  
Stress Model ◽  
Czochralski Growth ◽  
Type Iii
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