Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range

2019 ◽  
Vol 517 ◽  
pp. 1-6 ◽  
Author(s):  
Tanja Finke ◽  
Vitalii Sichkovskyi ◽  
Johann Peter Reithmaier
2013 ◽  
Vol 01 (02) ◽  
pp. 1350002
Author(s):  
XIAOHONG TANG ◽  
ZONGYOU YIN ◽  
BAOLIN ZHANG

In this paper, semiconductor quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal–organic vapor phase epitaxy growth. The InAs quantum dots grown at different conditions have been investigated. To improve the grown quantum dot's shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the In x Ga 1-x As matrix layer of the InAs / In x Ga 1-x As / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest > 2.35 μm measured at 77 K. For the narrower bandgap semiconductor InAsSb quantum dots, the emission wavelength was measured at > 2.8 μm.


2009 ◽  
Vol 311 (6) ◽  
pp. 1482-1486 ◽  
Author(s):  
P.J. Poole ◽  
K. Kaminska ◽  
P. Barrios ◽  
Z. Lu ◽  
J. Liu

2013 ◽  
Author(s):  
P. Kannan ◽  
A. Choudhary ◽  
B. Mills ◽  
V. M. Leonard ◽  
D. W. Hewak ◽  
...  

2001 ◽  
Vol 187 (1) ◽  
pp. 45-48 ◽  
Author(s):  
F.V. de Sales ◽  
S.W. da Silva ◽  
A.F.G. Monte ◽  
M.A.G. Soler ◽  
M.J. Da Silva ◽  
...  

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DG08 ◽  
Author(s):  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Mitsuhisa Ikeda ◽  
Seiichi Miyazaki
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