MOVPE GROWTH OF THE InP BASED MID-IR EMISSION QUANTUM DOT STRUCTURES

2013 ◽  
Vol 01 (02) ◽  
pp. 1350002
Author(s):  
XIAOHONG TANG ◽  
ZONGYOU YIN ◽  
BAOLIN ZHANG
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Emission ◽  
Emission Wavelength ◽  
Growth Method ◽  
Metal Organic ◽  
Size Uniformity ◽  
Dot Density ◽  
Inas Quantum Dot ◽  
Ir Emission

In this paper, semiconductor quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal–organic vapor phase epitaxy growth. The InAs quantum dots grown at different conditions have been investigated. To improve the grown quantum dot's shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the In x Ga 1-x As matrix layer of the InAs / In x Ga 1-x As / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest > 2.35 μm measured at 77 K. For the narrower bandgap semiconductor InAsSb quantum dots, the emission wavelength was measured at > 2.8 μm.

Growth and Characterization of InAs Quantum Dot Enhanced Photovoltaic Devices

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seth Martin Hubbard ◽  
Ryne Raffaelle ◽  
Ross Robinson ◽  
Christopher Bailey ◽  
David Wilt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Spectral Response ◽  
Cell Structure ◽  
Inas Quantum Dots ◽  
Cell Structures ◽  
Dot Density ◽  
Inas Quantum Dot ◽  
Iv Curves

AbstractThe growth of InAs quantum dots (QDs) by organometallic vapor phase epitaxy (OMVPE) for use in GaAs based photovoltaics devices was investigated. Growth of InAs quantum dots was optimized according to their morphology and photoluminescence using growth temperature and V/III ratio. The optimized InAs QDs had sizes near 7×40 nm with a dot density of 5(±0.5)×1010 cm-2. These optimized QDs were incorporated into GaAs based p-i-n solar cell structures. Cells with single and multiple (5x) layers of QDs were embedded in the i-region of the GaAs p-i-n cell structure. An array of 1 cm2 solar cells was fabricated on these wafers, IV curves collected under 1 sun AM0 conditions, and the spectral response measured from 300-1100 nm. The quantum efficiency for each QD cell clearly shows sub-bandgap conversion, indicating a contribution due to the QDs. Unfortunately, the overarching result of the addition of quantum dots to the baseline p-i-n GaAs cells was a decrease in efficiency. However, the addition of thin GaP strain compensating layers between the QD layers, was found to reduce this efficiency degradation and significantly enhance the subgap conversion in comparison to the un-compensated quantum dot cells.

Measuring temperature heterogeneities during solar-photothermal heating using quantum dot nanothermometry

The Analyst ◽  
2021 ◽  
Author(s):  
Stephanie K. Loeb ◽  
Haoran Wei ◽  
Jae-Hong Kim
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Fluorescence Emission ◽  
Emission Wavelength ◽  
Wavelength Shift ◽  
Cdse Quantum Dots ◽  
Photothermal Heating

The fluorescence emission wavelength shift of CdSe quantum dots due to heat-induced lattice dilatation is used to spatially resolve temperatures in solar photothermal systems.

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

Effects of InxGa1−xAs matrix layer on InAs quantum dot formation and their emission wavelength

2006 ◽  
Vol 100 (3) ◽  
pp. 033109 ◽  
Author(s):  
Zongyou Yin ◽  
Xiaohong Tang ◽  
Wei Liu ◽  
Daohua Zhang ◽  
Anyan Du
Keyword(s):  
Quantum Dot ◽  
Emission Wavelength ◽  
Matrix Layer ◽  
Inas Quantum Dot

Excitation Transfer through Quantum Dots Measured by Microluminescence: Dependence on the Quantum Dot Density

2001 ◽  
Vol 187 (1) ◽  
pp. 45-48 ◽  
Author(s):  
F.V. de Sales ◽  
S.W. da Silva ◽  
A.F.G. Monte ◽  
M.A.G. Soler ◽  
M.J. Da Silva ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Excitation Transfer ◽  
Dot Density

Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Preliminary Data ◽  
Charge Separation ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Storage Times ◽  
Time Resolved Photoluminescence

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55μm quantum dot lasers

2007 ◽  
Vol 91 (8) ◽  
pp. 081117 ◽  
Author(s):  
D. Franke ◽  
M. Moehrle ◽  
J. Boettcher ◽  
P. Harde ◽  
A. Sigmund ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Emission Wavelength ◽  
Quantum Dot Lasers ◽  
Organic Vapor ◽  
Metal Organic

Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light source

2013 ◽  
Vol 378 ◽  
pp. 553-557 ◽  
Author(s):  
N. Ozaki ◽  
Y. Nakatani ◽  
S. Ohkouchi ◽  
N. Ikeda ◽  
Y. Sugimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Source ◽  
Emission Wavelength ◽  
Broadband Light Source
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