Numerical analysis of effect of thermal stress depending on pulling rate on behavior of intrinsic point defects in large-diameter Si crystal grown by Czochralski method

2020 ◽  
Vol 531 ◽  
pp. 125334 ◽  
Author(s):  
Yuji Mukaiyama ◽  
Koji Sueoka ◽  
Susumu Maeda ◽  
Masaya Iizuka ◽  
Vasif M. Mamedov
Keyword(s):  
Thermal Stress ◽  
Numerical Analysis ◽  
Point Defects ◽  
Large Diameter ◽  
Czochralski Method ◽  
Intrinsic Point Defects

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

2003 ◽  
Vol 83 (15) ◽  
pp. 3048-3050 ◽  
Author(s):  
Zhenqiang Xi ◽  
Deren Yang ◽  
Jin Xu ◽  
Yujie Ji ◽  
Duanlin Que ◽  
...  
Keyword(s):  
Point Defects ◽  
Large Diameter ◽  
Czochralski Silicon ◽  
Intrinsic Point Defects ◽  
Copper Precipitation

Numerical Analysis on Cooling Process of Monocrystal Silicon Rod Manufactured with Czochralski Method

2012 ◽  
Vol 217-219 ◽  
pp. 1425-1428 ◽  
Author(s):  
Xiao Xia Liu ◽  
Li Jun He ◽  
Rui Zhou ◽  
Shao Lin Ma ◽  
Jing Mao
Keyword(s):  
Residual Stress ◽  
Thermal Stress ◽  
Numerical Analysis ◽  
Czochralski Method ◽  
Temperature Fields ◽  
Stress Fields ◽  
Finite Element Code ◽  
Cooling Process ◽  
Thermally Induced ◽  
Thermal Stress Field

A numerical analysis was performed to investigate the temperature distribution and thermal stress field in monocrystal silicon rod in the cooling process of manufactured with Czochralski (CZ) method. The thermally-induced residual stress fields of silicon rod under different length of cool-down time conditions were obtained as well as temperature fields, respectively. All simulations were finished by using ANSYS finite element code. It showed that, maximum thermal stress was mainly appeared on rod surface, the influence of length of cool-down time on it was not remarkable, the magnitude of it was far below the critical strength of silicon throughout.

Intrinsic point defects and charge carrier trapping in monolayer BiOX (X = I, Br, and Cl)

2021 ◽  
Author(s):  
Haixi Pan ◽  
Liping Feng ◽  
Xiaodong Zhang ◽  
Yang Chen ◽  
Gangquan Li ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Point Defects ◽  
Carrier Trapping ◽  
Intrinsic Point Defects ◽  
Charge Carrier Trapping
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