Unsteady numerical simulations considering effects of thermal stress and heavy doping on the behavior of intrinsic point defects in large-diameter Si crystal growing by Czochralski method

2020 ◽  
Vol 532 ◽  
pp. 125433
Author(s):  
Yuji Mukaiyama ◽  
Koji Sueoka ◽  
Susumu Maeda ◽  
Masaya Iizuka ◽  
Vasif M. Mamedov
Keyword(s):  
Thermal Stress ◽  
Numerical Simulations ◽  
Point Defects ◽  
Large Diameter ◽  
Czochralski Method ◽  
Intrinsic Point Defects ◽  
Heavy Doping

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

2003 ◽  
Vol 83 (15) ◽  
pp. 3048-3050 ◽  
Author(s):  
Zhenqiang Xi ◽  
Deren Yang ◽  
Jin Xu ◽  
Yujie Ji ◽  
Duanlin Que ◽  
...  
Keyword(s):  
Point Defects ◽  
Large Diameter ◽  
Czochralski Silicon ◽  
Intrinsic Point Defects ◽  
Copper Precipitation

Intrinsic point defects and charge carrier trapping in monolayer BiOX (X = I, Br, and Cl)

2021 ◽  
Author(s):  
Haixi Pan ◽  
Liping Feng ◽  
Xiaodong Zhang ◽  
Yang Chen ◽  
Gangquan Li ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Point Defects ◽  
Carrier Trapping ◽  
Intrinsic Point Defects ◽  
Charge Carrier Trapping
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