scholarly journals Theoretical Study of the Impact of Substitutional Dopants and Thermal Stress on the Behavior of Intrinsic Point Defects in Growing Single Crystal Silicon

Hyomen Kagaku ◽  
2016 ◽  
Vol 37 (3) ◽  
pp. 116-121
Author(s):  
Koji SUEOKA
2018 ◽  
Vol 36 (1) ◽  
pp. 129-135
Author(s):  
J. Shen ◽  
I. Shahid ◽  
X. Yu ◽  
J. Zhang ◽  
H.W. Zhong ◽  
...  

AbstractSurface exfoliation was observed on single-crystal silicon surface under the action of compressed plasma flow (CPF). This phenomenon is mainly attributed to the strong transient thermal stress impact induced by CPF. To gain a better understanding of the mechanism, a micro scale model combined with thermal conduction and linear elastic fracture mechanics was built to analyze the thermal stress distribution after energy deposition. After computation with finite element method, J integral parameter was applied as the criterion for fracture initiation evaluation. It was demonstrated that the formation of surface exfoliation calls for specific material, crack depth, and CPF parameter. The results are potentially valuable for plasma/matter interaction understanding and CPF parameter optimization.


2015 ◽  
Vol 1088 ◽  
pp. 779-782
Author(s):  
Xiao Jing Yang ◽  
Yong Li ◽  
Wei Xing Zhang

The experiment of cutting mechanical properties of single crystal silicon surface in the micro-nanoscale is researched using nanoindenter and atomic force microscopy. The result of the experiment shows that: in the constant load, the impact of different scratching velocity for single crystal silicon surface scratch groove width and chip accumulation volume are not big; but the cutting force and friction coefficient are not increases with the scratching velocity increases; when the scratching speed is certain, the size of load has a greater impact on the cutting mechanical properties of single crystal silicon surface, with the increase of the load, the cutting force increases, but the cutting force is not linearly growth.


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