Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE

2021 ◽  
Vol 560-561 ◽  
pp. 126046
Author(s):  
Atsushi Yamada ◽  
Junya Yaita ◽  
Norikazu Nakamura ◽  
Junji Kotani
Keyword(s):  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Algan Barrier

High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

2014 ◽  
Vol 1635 ◽  
pp. 9-14 ◽  
Author(s):  
Andrzej Taube ◽  
Maciej Kozubal ◽  
Jakub Kaczmarski ◽  
Marcin Juchniewicz ◽  
Adam Barcz ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Resistivity ◽  
High Electron ◽  
Electrical Measurements ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Insulating Properties

ABSTRACTThe paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

2013 ◽  
Vol 805-806 ◽  
pp. 1027-1030 ◽  
Author(s):  
Da Qing Peng ◽  
Xun Dong ◽  
Zhong Hui Li ◽  
Dong Guo Zhang ◽  
Liang Li ◽  
...  
Keyword(s):  
Phase Separation ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
2Deg Density

AlGaN/InGaN/GaN double heterostructure high electron mobility transistor (HEMT) with In composition from 0.08 to 0.26 were grown by MOCVD. 2DEG density and mobility of different channel In composition were investigated. When In composition below 0.19, 2DEG density increased nearly linearly with In composition, and the mobility decreased a bit. While In composition over 0.19, phase separation became more serious, 2DEG density nearly not changed, and the mobility dropped sharply. A high 2DEG mobility of 1163 cm2/V·s with low sheet resistance of 342Ω/ was obtained with In composition 0.19.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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