Exact relations for the differential conductance and rectification ratio of the tunnel current in the redox-mediated tunneling junctions and demonstration within the fully diabatic approximation for electron transitions

2020 ◽  
Vol 856 ◽  
pp. 113640
Author(s):  
Igor G. Medvedev
2006 ◽  
Vol 52 ◽  
pp. 116-120 ◽  
Author(s):  
Victor Da Costa ◽  
M. Romeo

This paper illustrates statistical properties of tunnel currents flowing through metalinsulator- metal tunnel junctions. A direct experiment performed on a metal-oxide junction shows that the tunnel current follows broad statistical distributions extending over more than 4 orders of magnitude. A simple lognormal law is proposed to explain the properties of currents flowing through tunnel junctions.


2014 ◽  
Vol 2014 ◽  
pp. 1-15 ◽  
Author(s):  
Michihide Kitamura ◽  
Yoshitaka Uchiumi ◽  
Akinobu Irie

Charge and spin currents along the c-axis in ferromagnet-insulator-superconductor (F/I/S) tunneling junctions have been studied within the framework of the tunneling Hamiltonian model. As a superconductor S, HgBa2Ca2Cu3O8+δ (Hg-1223) with δ=0.4 copper-oxide high-Tc superconductor has been selected, and as a ferromagnet F, Fe metal with bcc structure has been selected for simplicity. The electronic structures of above materials have been calculated on the basis of the band theory using the spin-polarized self-consistent-field data for the atomic orbital energies and the universal tight-binding parameters (UTBP) for the interactions. For the η↑ and η↓(=1-η↑) defined in the present paper, which are tunneling probabilities of the majority and the minority spin electrons, it is shown that the condition η↑=η↓ means the standard F/I/S tunneling junction with a nonmagnetic insulating layer, and the condition η↑≠η↓means the F/I/S tunneling junction with a magnetic insulating layer showing a detectable magnetization. We have found that the charge current and the differential conductance nearly remain the same as the change of η↑, but the spin current is largely changed due to the change of η↑. As an experimental method to detect the change of the spin current, the validity of an X-ray magnetic circular dichroism (XMCD) has been pointed out.


Author(s):  
R. H. Duff

A material irradiated with electrons emits x-rays having energies characteristic of the elements present. Chemical combination between elements results in a small shift of the peak energies of these characteristic x-rays because chemical bonds between different elements have different energies. The energy differences of the characteristic x-rays resulting from valence electron transitions can be used to identify the chemical species present and to obtain information about the chemical bond itself. Although these peak-energy shifts have been well known for a number of years, their use for chemical-species identification in small volumes of material was not realized until the development of the electron microprobe.


1982 ◽  
Vol 138 (12) ◽  
pp. 573 ◽  
Author(s):  
V.I. Matveev ◽  
E.S. Parilis
Keyword(s):  

2020 ◽  
Author(s):  
Xinkai Qiu ◽  
Sylvia Rousseva ◽  
Gang Ye ◽  
Jan C. Hummelen ◽  
Ryan Chiechi

This paper describes the reconfiguration of molecular tunneling junctions during operation via the self-assembly of bilayers of glycol ethers. We use well-established functional groups to modulate the magnitude and direction of rectification in assembled tunneling junctions by exposing them to solutions containing different glycol ethers. Variable-temperature measurements establish that rectification occurs by a bias-dependent tunneling-hopping mechanism and that glycol ethers, beside being an unusually efficient tunneling medium, behave identically to alkanes. We fabricated memory bits from crossbar junctions prepared by injecting eutectic Ga-In into microfluidic channels. Two 8-bit registers were able to perform logical AND operations on bit strings encoded into chemical packets as microfluidic droplets that alter the composition of the crossbar junctions through self-assembly to effect memristor-like properties. This proof of concept work demonstrates the potential for fieldable molecular-electronic devices based on tunneling junctions of self-assembled monolayers and bilayers.


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