scholarly journals Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval

Author(s):  
Serhat Orkun Tan ◽  
Osman Çiçek ◽  
Çağrı Gökhan Türk ◽  
Şemsettin Altındal
Author(s):  
Sema Türkay ◽  
Adem Tataroğlu

AbstractRF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric permittivity (ε*), complex electric modulus (M*) and complex electrical conductivity (σ*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (ε′) and dielectric loss (ε″) value decrease with increasing frequency. However, as the temperature increases, the ε′ and ε″ increased. Ac conductivity (σac) was increased with increasing both temperature and frequency. The activation energy (Ea) was determined by Arrhenius equation. Besides, the frequency dependence of σac was analyzed by Jonscher’s universal power law (σac = Aωs). Thus, the value of the frequency exponent (s) were determined.


2016 ◽  
Vol 61 (2) ◽  
pp. 905-908 ◽  
Author(s):  
W. Bąk ◽  
C. Kajtoch ◽  
S. Ptaszek ◽  
A. Lisińska-Czekaj ◽  
D. Czekaj ◽  
...  

Abstract The results of the microstructural and dielectric measurements of (Ba1-xPbx)(Ti1-xSnx)O3 (BPTSx) (x = 0, 0.05, 0.10, 0.30) polycrystalline samples are presented. The samples were obtained by means of a high temperature synthesis and their expected stoichiometry was confirmed by energy dispersive spectroscopy (EDS) measurements. The dielectric properties of BPTSx were studied with the use of broadband dielectric spectroscopy. The measurements over a wide range of temperature (from 140 K to 600 K) and frequency (from 0.1 Hz to 10 MHz) were performed. The experimental results indicate an influence of Pb ions in a sublattice A and Sn ions in a sublattice B substitution on paraelectric - ferroelectric phase transition parameters. Diffused phase transitions from a paraelectric to ferroelectric state (for x = 0.10 and x = 0.30) were observed. From the electric modulus measurements in the frequency domain the relaxation times and the activation energy were determined.


2016 ◽  
Vol 868 ◽  
pp. 61-67
Author(s):  
Peng Fei Gao ◽  
Xin Yu ◽  
Nai Kui Gao ◽  
Teng Yue Ren ◽  
Chun Wu ◽  
...  

Liquid crystal (LC) polymer, composited with inorganic filler, has a broad application prospect in electronic and electrical industry. In this research, permittivity (εr) and dielectric loss tangent (tanδ) of LC composites under different temperatures and frequencies were investigated, and activation energies were calculated and analyzed. At low temperatures and high frequencies, LC composites exhibited well dielectric properties. εr changed a little (3.6~4.0) in temperature range of-60°C~160°C when frequency was higher than 10Hz, but increased sharply when temperatures was higher than 100°C and frequency was lower 10Hz. The tanδ increased sharply with increasing temperature when temperatures was higher than 100°C and frequency was lower than 102Hz, and when frequency was above 102Hz, the value of tanδ changed gently (10-3~10-2). The peak of tanδ would translate to higher frequencies direction with increasing temperature in tanδ-frequency curve, and to higher temperatures direction with increasing frequency in tanδ-temperature curve. Activation energy is calculated by fitting the peak of the imaginary of the electric modulus, and activation energy is 0.43eV in low temperature and 1.59eV in high temperature.


2015 ◽  
Vol 45 (2) ◽  
pp. 917-927 ◽  
Author(s):  
N. H. Vasoya ◽  
Prafulla K. Jha ◽  
K. G. Saija ◽  
S. N. Dolia ◽  
K. B. Zankat ◽  
...  

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