Fabrication and characterization of a new-style structure capillary channel in reaction bonded silicon carbide composites

2017 ◽  
Vol 37 (7) ◽  
pp. 2569-2574 ◽  
Author(s):  
Suocheng Song ◽  
Chonggao Bao ◽  
Yana Ma ◽  
Keke Wang
Keyword(s):  
Silicon Carbide ◽  
Capillary Channel ◽  
Fabrication And Characterization

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Harsh Environment ◽  
Stable Operation ◽  
Temperature Changes ◽  
Turn On ◽  
Sensing Applications ◽  
Depth Study ◽  
Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

Fabrication and characterization of reaction-bonded silicon carbide with poly(methyl methacrylate) as pore-forming agent

2013 ◽  
Vol 39 (5) ◽  
pp. 5295-5302 ◽  
Author(s):  
Qide Wu ◽  
Chaochen Yang ◽  
Hongquan Zhang ◽  
Changxia Yin ◽  
B.W. Darvell ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Methyl Methacrylate ◽  
Poly Methyl Methacrylate ◽  
Fabrication And Characterization
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