Crystal-field splitting of the Cr4+ terms in LiAlO2 oxide crystal

2004 ◽  
Vol 106 (3-4) ◽  
pp. 205-210 ◽  
Author(s):  
Souha Kammoun
Keyword(s):  
Crystal Field ◽  
Crystal Field Splitting ◽  
Field Splitting ◽  
Oxide Crystal

Crystal-Field Splitting of Orthohydrogen in Solid Parahydrogen

1967 ◽  
Vol 19 (25) ◽  
pp. 1417-1420 ◽  
Author(s):  
Walter N. Hardy ◽  
James R. Gaines
Keyword(s):  
Crystal Field ◽  
Crystal Field Splitting ◽  
Field Splitting

Magnetic Anisotropy in Single Crystals of Zn–Mn and Zn–Cr

1974 ◽  
Vol 52 (18) ◽  
pp. 1759-1764 ◽  
Author(s):  
F. T. Hedgcock ◽  
S. Lenis ◽  
P. L. Li ◽  
J. O. Ström-Olsen ◽  
E. F. Wassermann
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Magnetic Anisotropy ◽  
Single Crystals ◽  
Crystal Field ◽  
Interaction Effects ◽  
Crystal Field Splitting ◽  
High Magnetic Fields ◽  
Field Splitting ◽  
Chromium Ion

We have extended the low temperature magnetic anisotropy measurements on single crystals of zinc containing up to 600 p.p.m. manganese from magnetic fields of 9 to 56 kG. The crystal field splitting parameters determined at low magnetic fields also characterizes the magnetic anisotropy at high magnetic fields. Manganese–manganese interaction effects are observed in the magnetic anisotropy at manganese concentrations greater than 300 p.p.m. Low temperature magnetic anisotropy measurements on single crystals of zinc containing up to 164 p.p.m. chromium are reported and indicate a crystal field splitting of 0.16 K for the chromium ion.

Crystal Field Splitting of the Ground State of Terbium(III) and Dysprosium(III) Complexes with a Triimidazolyl Tripod Ligand and an Acetate Determined by Magnetic Analysis and Luminescence

2014 ◽  
Vol 53 (19) ◽  
pp. 10359-10369 ◽  
Author(s):  
Seira Shintoyo ◽  
Keishiro Murakami ◽  
Takeshi Fujinami ◽  
Naohide Matsumoto ◽  
Naotaka Mochida ◽  
...  
Keyword(s):  
Crystal Field ◽  
Ground State ◽  
Crystal Field Splitting ◽  
Field Splitting ◽  
Magnetic Analysis

Theory Of 3d Transition Metal Defects In 3C SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Electronic Properties ◽  
Crystal Field ◽  
High Spin ◽  
Crystal Field Splitting ◽  
Large Crystal ◽  
Field Splitting ◽  
Vacancy Model ◽  
The Difference

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.

Sign in / Sign up

Export Citation Format

Share Document