Observation of explosive crystallization during excimer laser annealing using in situ time-resolved optical reflection and transmission measurements

XeF excimer laser-induced melting and recrystallization of amorphous silicon was studied using in-situ online time-resolved reflection and transmission measurements with a nanosecond time resolution. The explosive crystallization was observed for 50nm thick amorphous silicon on SiO2 deposited on non-alkali glass substrate upon 25ns pulse duration of excimer laser. Three distinct regrowth regimes were found using various excimer laser fluences. Scanning electron microscopy, Raman spectroscopy and atomic force microscopy were used to evaluate the excimer laser- irradiated region of the sample. Grain size, surface roughness and melt duration as a function of different laser fluences are also determined.

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Nanosecond Time Resolution In Situ Optical Reflection and Transmission Measurements during XeF Excimer Laser Interaction with Amorphous Silicon Thin Films

Materials Science Forum - Progress on Advanced Manufacture for Micro/Nano Technology 2005 ◽

10.4028/0-87849-990-3.337 ◽

2006 ◽

pp. 337-342 ◽

Cited By ~ 2

Author(s):

Chil Chyuan Kuo ◽

W.C. Yeh ◽

C.B. Chen ◽

J.Y. Jeng

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Excimer Laser ◽

Time Resolution ◽

Reflection And Transmission ◽

Optical Reflection ◽

Silicon Thin Films ◽

Transmission Measurements ◽

Nanosecond Time Resolution

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In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1614 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1614-1617

Author(s):

Cheol-Min Park ◽

Byung-Hyuk Min ◽

Juhn-Suk Yoo ◽

Hong-Seok Choi ◽

Min-Koo Han

Keyword(s):

Excimer Laser ◽

Laser Annealing ◽

Gate Oxide ◽

Excimer Laser Annealing ◽

In Situ Fabrication ◽

Xecl Excimer Laser

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Time-Resolved Optical Studies of Amorphous CoSi Thin-Film Crystallization

MRS Proceedings ◽

10.1557/proc-280-715 ◽

1992 ◽

Vol 280 ◽

Cited By ~ 1

Author(s):

M. Libera ◽

T. Kim ◽

K. Siangchaew ◽

L. Clevenger ◽

Q. Hong

Keyword(s):

Kinetic Modelling ◽

Optical Data ◽

Optical Studies ◽

Tem Analysis ◽

Reflection And Transmission ◽

Time Resolved ◽

Transmission Electron ◽

Transmission Measurements ◽

Potential Use

ABSTRACTTime-resolved reflection and transmission measurements during heating are coupled with transmission electron microscopy (TEM) to study the crystallization of amorphous 75nm Co49Si51 films. The reflection decreases and the transmission increases upon crystallization. Optical data are converted to a measure of the fraction crystallized, χ=χ(T,t). A Kissinger analysis gives an activation energy for crystallization of 1.1 eV. TEM analysis of films crystallized in-situ show they are principally CoSi2 with a small amount of CoSi2. These results are being used for kinetic modelling of crystallization of amorphous Co-silicide films for potential use in Si mosfet and bipolar technologies.

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