Magnetization and susceptibility of a parabolic InAs quantum dot with electron–electron and spin–orbit interactions in the presence of a magnetic field at finite temperature

2016 ◽  
Vol 418 ◽  
pp. 169-174 ◽  
Author(s):  
D. Sanjeev Kumar ◽  
Soma Mukhopadhyay ◽  
Ashok Chatterjee
Keyword(s):  
Magnetic Field ◽  
Quantum Dot ◽  
Finite Temperature ◽  
Spin Orbit ◽  
Inas Quantum Dot ◽  
Spin Orbit Interactions

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

Superconductors with spin–orbit interactions

2016 ◽  
Vol 30 (25) ◽  
pp. 1650183 ◽  
Author(s):  
Yu. N. Ovchinnikov
Keyword(s):  
Magnetic Field ◽  
Superconducting Films ◽  
Critical Magnetic Field ◽  
Spin Orbit ◽  
Zero Temperature ◽  
Interband Pairing ◽  
Two Parameters ◽  
Spin Orbit Interactions ◽  
Parameter Values ◽  
Thin Superconducting Films

The effect of spin-orbit (SO) interaction on the formation of the critical states in thin superconducting films in magnetic field oriented along the film is investigated. Hereby, the case of interband pairing is considered. It was found that eight branches exist in the plane of two parameters [Formula: see text] determined by the value of magnetic field and SO interaction. Six modes leads to inhomogeneous states with different values of the impulse [Formula: see text]. Each state is doubly degenerate over direction of impulse [Formula: see text]. The parameter values at critical point are found for all eight branches in explicit form for zero temperature. The optimal two branches are estimated, corresponding to largest critical magnetic field value for given SO interaction.

Spin-Orbit Interactions in Semiconductor Quantum Ring in the Presence of Magnetic Field

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940016
Author(s):  
A. V. Baran ◽  
V. V. Kudryashov
Keyword(s):  
Magnetic Field ◽  
Perturbation Theory ◽  
Constant Magnetic Field ◽  
Energy Levels ◽  
Finite Depth ◽  
Quantum Ring ◽  
Spin Orbit ◽  
Potential Well ◽  
Realistic Potential ◽  
Spin Orbit Interactions

Energy levels of electrons in the semiconductor circular quantum ring are obtained within the framework of perturbation theory in the presence of the Rashba and Dresselhaus spin-orbit interactions and external uniform constant magnetic field. The confinement effect is simulated by the realistic potential well of a finite depth.

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