Spin Polarization Rate Calculation for T-shaped Double Quantum Dots Coupled to (C- terminated ScC(111) surface) leads

Author(s):  
Maged A. Nattiq ◽  
Jenan M. Al-Mukh ◽  
Jabbar M. Khalaf Al-zyadi
2004 ◽  
Vol 19 (9) ◽  
pp. 1125-1130 ◽  
Author(s):  
S Lee ◽  
S-R Eric Yang ◽  
M Dobrowolska ◽  
J K Furdyna

2016 ◽  
Vol 30 (22) ◽  
pp. 1650266 ◽  
Author(s):  
Yan-Hua Liao ◽  
Jin Huang ◽  
Wei-Zhong Wang

We study the transport properties in double quantum dots asymmetrically coupled to leads in magnetic field. We focus on the situation in which the second dot (QD2) couples with the leads with a weak hybridization function. The results shows that by tuning the energy level [Formula: see text] of QD2 one can control the conductance and its spin polarization of the system. In the absence of magnetic field [Formula: see text], with increasing [Formula: see text], the conductance shows a dip structure. This behavior of conductance results from a continuous triplet–doublet quantum phase transition. In the presence of magnetic field [Formula: see text], we obtain a perfect spin filtering with a fully-polarized conductance of up-spin or down-spin.


2011 ◽  
Vol 375 (45) ◽  
pp. 4078-4080 ◽  
Author(s):  
Xing-Tao An ◽  
Hui-Ying Mu ◽  
Yu-Xian Li ◽  
Jian-Jun Liu

2015 ◽  
Vol 29 (25) ◽  
pp. 1550145
Author(s):  
Cheng-Zhi Ye ◽  
Wei-Tao Lu ◽  
Chang-Tan Xu

Using the standard nonequilibrium Green’s function techniques, we investigate the effect of Rashba spin-orbit interaction (RSOI) and ferromagnetic electrode on the spin accumulation in the parallel-coupled double quantum dots coupled with a ferromagnetic and a superconducting electrode. It is demonstrated that FM electrode cannot induce the spin polarization of Andreev reflection (AR) current, but can induce the spin accumulation in the QDs. However, RSOI can lead to the spin polarization of AR current as well as the spin accumulation in the QDs. In the existence of RSOI, complete spin-polarized QD can be achieved with negative bias voltage [Formula: see text], which is the most significant advantage of our device. When energy levels [Formula: see text] and the interdot coupling strength [Formula: see text], the maximum value of spin accumulation in this paper is obtained as 0.7. The results may be useful on the design of spintronic devices.


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