scholarly journals An analytical model of interfacial energy based on a lattice-matching interatomic energy

2016 ◽  
Vol 89 ◽  
pp. 174-193 ◽  
Author(s):  
Brandon Runnels ◽  
Irene J. Beyerlein ◽  
Sergio Conti ◽  
Michael Ortiz
Keyword(s):  
Analytical Model ◽  
Interfacial Energy ◽  
Lattice Matching ◽  
Interatomic Energy

The Capillarity Influence On Shape Of Small Liquid Inclusions Enclosed In A Solid Under Non-Stationary Thermal Conditions

2000 ◽  
Vol 648 ◽  
Author(s):  
Vladimir Yu. Gershanov ◽  
Sergey I. Garmashov ◽  
Andrey R. Minyaev ◽  
Nickita E. Ivanov ◽  
Irina Yu. Nosuleva
Keyword(s):  
Analytical Model ◽  
Interfacial Energy ◽  
Thermal Conditions ◽  
Liquid Inclusion ◽  
Capillary Effect ◽  
Sectional Area ◽  
Cross Sectional ◽  
Anisotropic Crystal ◽  
Inclusion Shape ◽  
Sectional Shape

AbstractAn analytical model taking into account the influence of capillarity on the process of changing the cross-sectional shape of a cylindrical liquid inclusion enclosed in an anisotropic crystal under non-stationary thermal conditions is suggested. It is shown that the capillary effect confines the possibilities for controlling the inclusion shape under non-stationary thermal conditions. The capillarity influence becomes stronger with decreasing cross-sectional area and increasing interfacial energy. The results of calculations of the limit inclusion shape under different thermal conditions are presented and discussed.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

ANALYTICAL MODEL OF SUPEREXCHANGE

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-911-C8-912
Author(s):  
Yu. V. Rakitin ◽  
V. T. Kalinnikov
Keyword(s):  
Analytical Model

ANALYTICAL MODEL FOR ENVIRONMENTAL IMPACT OF SOLID WASTE DISPOSAL FROM ELECTRICITY GENERATION

2002 ◽  
Vol 4 (1-2) ◽  
pp. 26
Author(s):  
Paulo Fernando Lavalle Heilbron Filho ◽  
Jesus Salvador Perez Guerrero ◽  
Elizabeth May Pontedeiro ◽  
Nerbe J. Ruperti, Jr. ◽  
Renato M. Cotta
Keyword(s):  
Environmental Impact ◽  
Solid Waste ◽  
Analytical Model ◽  
Waste Disposal ◽  
Electricity Generation ◽  
Solid Waste Disposal
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