High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealing

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1434-1437 ◽  
Author(s):  
Sang-Myeon Han ◽  
Moon-Young Shin ◽  
Joong-Hyun Park ◽  
Min-Koo Han
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