High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealing
2006 ◽
Vol 352
(9-20)
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pp. 1434-1437
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2000 ◽
Vol 147
(4)
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pp. 1481
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2015 ◽
Vol 7
(39)
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pp. 21884-21889
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2002 ◽
Vol 74
(1-4)
◽
pp. 97-105
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2015 ◽
Vol 26
(10)
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pp. 7790-7796
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2005 ◽
Vol 193
(1-3)
◽
pp. 152-156
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2014 ◽
Vol 67
◽
pp. 197-201
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