Effects of substrate temperature on structural, optical and morphological properties of hydrogenated nanocrystalline silicon thin films prepared by inductively coupled plasma chemical vapor deposition

2015 ◽  
Vol 26 (10) ◽  
pp. 7790-7796 ◽  
Author(s):  
Dingyu Yang ◽  
Xinghua Zhu ◽  
Hui Sun ◽  
Xiuying Gao ◽  
Xu Li
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Morphological Properties ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Thin Films

Investigation on the Surface Passivation of Intrinsic a-Si:H Thin Films Prepared by Inductively Coupled Plasma-Chemical Vapor Deposition for Heterojunction Solar Cell Applications

2008 ◽  
Vol 8 (9) ◽  
pp. 4662-4665 ◽  
Author(s):  
Chaehwan Jeong ◽  
Minsung Jeon ◽  
Tae-Won Kim ◽  
Seongjae Boo ◽  
Koichi Kamisako
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Carrier Lifetime ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled

Intrinsic a-Si:H thin films, which can have passivation functions on the surface of crystalline Si, were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD). The properties of the films were investigated at deposition temperatures ranging from 50 to 400 °C. The Si—H stretching mode at 2000 cm−1, which indicates good film quality, was found in the range of 150∼400 °C, but the film quality was not good at deposition temperatures below 150 °C. The passviation quality was determined by measuring the effective carrier lifetime using the quasi-steady state photoconductance (QSS-PC) technique. Two, 5, 7.5 and 10 nm thick films were deposited at 150 °C and annealed at 200 °C for 1 hour. The carrier lifetime of these films was approximately 3 times higher than that observed before annealing. A p a-SiC:H/i a-Si:H/n c-Si hetero-structure solar cell with a 7.8% efficiency and approximately 85% quantum efficiency (QE) was obtained by inserting an intrinsic a-Si:H thin film (5 nm) between the interfaces. These results highlight the potential applications of a passivation layer to heterojunction solar cells.

Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C

2005 ◽  
Vol 862 ◽  
Author(s):  
Sang-Myeon Han ◽  
Joong-Hyun Park ◽  
Hye-Jin Lee ◽  
Kwang-Sub Shin ◽  
Min-Koo Han
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Process Gas ◽  
Si Films

AbstractNanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.

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