Interdigitated back contact solar cells with SiO2 and SiN back surface passivation

AbstractThis paper identifies some mechanisms that lead to problems in back Al contact formation. Major issues are related to a basic problem that the Al melt has a large surface tension and tries to ball up during the firing step. Other issues arise from dissolution of the Si-Al interface and entrapment of glass within the Si-Al alloy. Si diffusion into Al can be applied to control the melt, while cooling rate can help improve the structure of various regions of the back contact for a favorable series resistance. We also discuss a modified time-temperature profile that can lead to a deep and uniform back-surface field.

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Optimization of interdigitated back contact silicon heterojunction solar cells: tailoring hetero-interface band structures while maintaining surface passivation

Progress in Photovoltaics Research and Applications ◽

10.1002/pip.1032 ◽

2010 ◽

Vol 19 (3) ◽

pp. 326-338 ◽

Cited By ~ 59

Author(s):

Meijun Lu ◽

Ujjwal Das ◽

Stuart Bowden ◽

Steven Hegedus ◽

Robert Birkmire

Keyword(s):

Solar Cells ◽

Surface Passivation ◽

Back Contact ◽

Band Structures ◽

Heterojunction Solar Cells ◽

Silicon Heterojunction Solar Cells

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Study of electrical properties of oxidized porous silicon for back surface passivation of silicon solar cells

Renewable Energy ◽

10.1016/j.renene.2007.05.034 ◽

2008 ◽

Vol 33 (2) ◽

pp. 282-285 ◽

Cited By ~ 1

Author(s):

Suresh Kumar Dhungel ◽

Jinsu Yoo ◽

Kyunghae Kim ◽

Somnath Ghosh ◽

Sungwook Jung ◽

...

Keyword(s):

Solar Cells ◽

Electrical Properties ◽

Porous Silicon ◽

Surface Passivation ◽

Silicon Solar Cells ◽

Back Surface ◽

Oxidized Porous Silicon

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Porous silicon solar cells with 13.66% efficiency achieved by employing graphene-quantum-dots interfacial layer, doped-graphene electrode, and bathocuproine back-surface passivation layer

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.160311 ◽

2021 ◽

pp. 160311

Author(s):

Chan Wook Jang ◽

Dong Hee Shin ◽

Suk-Ho Choi

Keyword(s):

Quantum Dots ◽

Solar Cells ◽

Porous Silicon ◽

Interfacial Layer ◽

Surface Passivation ◽

Graphene Quantum Dots ◽

Passivation Layer ◽

Silicon Solar Cells ◽

Back Surface ◽

Doped Graphene

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TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

10.21203/rs.3.rs-269604/v1 ◽

2021 ◽

Author(s):

Bablu K. Ghosh ◽

Ismail Saad ◽

Khairul A Mahmood

Keyword(s):

Thin Film ◽

Solar Cells ◽

Open Circuit Voltage ◽

Open Circuit ◽

Electrical Performance ◽

Back Surface ◽

Back Contact ◽

Metal Contacts ◽

Contact Barrier ◽

Interface Layers

Abstract CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter and buffer layer selection with band gap matching to the active layer can lessen parasitic absorption loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.

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