Quantum Size Effect and very localized random laser in ZnO@mesoporous silica nanocomposite following a two-photon absorption process

2009 ◽  
Vol 355 (18-21) ◽  
pp. 1152-1156 ◽  
Author(s):  
Claire Bouvy ◽  
Evgeny Chelnokov ◽  
Wladimir Marine ◽  
Robert Sporken ◽  
Bao-Lian Su
Keyword(s):  
Mesoporous Silica ◽  
Size Effect ◽  
Quantum Size Effect ◽  
Photon Absorption ◽  
Random Laser ◽  
Absorption Process ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Quantum Size ◽  
Silica Nanocomposite

Optimization of Band Structure and Quantum-Size-Effect Tuning for Two-Photon Absorption Enhancement in Quantum Dots

Nano Letters ◽  
2011 ◽  
Vol 11 (3) ◽  
pp. 1227-1231 ◽  
Author(s):  
Lazaro A. Padilha ◽  
Gero Nootz ◽  
Peter D. Olszak ◽  
Scott Webster ◽  
David J. Hagan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Structure ◽  
Size Effect ◽  
Quantum Size Effect ◽  
Photon Absorption ◽  
Absorption Enhancement ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Quantum Size

scholarly journals Photolysis of SiH4 by the Third Harmonic of a Nd:YAG Laser at 355 NM

1996 ◽  
Vol 16 (4) ◽  
pp. 245-253
Author(s):  
K. Sentrayan ◽  
E. Haque ◽  
A. Michael ◽  
V. S. Kushawaha
Keyword(s):  
Laser Energy ◽  
Emission Spectra ◽  
Photon Absorption ◽  
Absorption Process ◽  
Third Harmonic ◽  
Two Photon Absorption ◽  
Two Photon ◽  
The Third ◽  
Atomic Lines ◽  
White Deposit

The photolysis of silane (SiH4) was carried out using the third harmonic of a Nd: YAG laser at 355 nm, at a fixed SiH4 pressure of 350 Torr, varying the laser energy fluence in the range of 30–300 Jcm-2. The emission spectra indicates that the photofragments formed are SiH2, SiH, Si, H2, and H. The (A1B1-X1A1) transitions at 552.7 nm, 525.3 nm, 505.6 nm, and 484.7 nm of SiH2 are due to a two photon absorption process. The (A2Δ-X2π) transitions of SiH at 425.9 nm, 418 nm, 414.2 nm, 412.8 nm and 395.6 nm are due to a three photon absorption process. The brownish white deposit on the cell windows indicates the presence of amorphous silicon (a:Si-H). The two atomic lines of Si(4s1P0→ 3p21D2) at 288.1 nm, and (4s3Pj→ 3P3Pj) at 251.6 nm are observed. The atomic Si transitions are due to a three photon absorption. We observed seven transitions due to molecular hydrogen at wavelengths 577.5 nm, 565.5 nm, 534.4 nm, 542.5 nm, 471 nm, 461.7 nm, and 455.4 nm. These bands are due to a four photon absorption proc6ss. In addition to the molecular bands we also observed hydrogen atomic lines Hβ, Hγ and Hδ.

scholarly journals Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

2016 ◽  
Vol 858 ◽  
pp. 245-248 ◽  
Author(s):  
Hassan Hamad ◽  
Christophe Raynaud ◽  
Pascal Bevilacqua ◽  
Sigo Scharnholz ◽  
Bertrand Vergne ◽  
...  
Keyword(s):  
Single Photon ◽  
Green Laser ◽  
Photon Absorption ◽  
Absorption Process ◽  
Field Range ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Avalanche Diodes ◽  
Single Photon Absorption ◽  
Ionization Rates

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.

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