Temporal electric conductivity variations of hydrogenated amorphous silicon due to high energy protons

2012 ◽  
Vol 358 (17) ◽  
pp. 2039-2043 ◽  
Author(s):  
Shin-ichiro Sato ◽  
Hitoshi Sai ◽  
Takeshi Ohshima ◽  
Mitsuru Imaizumi ◽  
Kazunori Shimazaki ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Electric Conductivity ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Hydrogenated Amorphous

Radiation hard amorphous silicon particle sensors

2005 ◽  
Vol 862 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
C. Ballif ◽  
A. Shah ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Proton Beam ◽  
Thermal Annealing ◽  
Silicon Particle ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Significant Drop ◽  
Radiation Hard ◽  
Hydrogenated Amorphous ◽  
Subsequent Thermal Annealing

AbstractRadiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

Development of hydrogenated amorphous silicon sensors for high energy photon radiotherapy imaging

1990 ◽  
Vol 37 (2) ◽  
pp. 165-170 ◽  
Author(s):  
L.E. Antonuk ◽  
J. Yorkston ◽  
J. Boudry ◽  
M.J. Longo ◽  
J. Jimenez ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
High Energy Photon ◽  
Energy Photon ◽  
Silicon Sensors ◽  
Hydrogenated Amorphous ◽  
Photon Radiotherapy

Effects of Ultraviolet Radiation on the Characteristics of Hydrogenated Amorphous Silicon Thin Film Transistors

1992 ◽  
Vol 258 ◽  
Author(s):  
Seong K. Lee ◽  
Jin S. Park ◽  
Yong S. Kim ◽  
Jung R. Hwang ◽  
Chang H. Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Uv Radiation ◽  
Thin Film Transistors ◽  
Uv Light ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Experimental Results ◽  
Light Illumination ◽  
Hydrogenated Amorphous

ABSTRACTThe experimental results regarding to the effects of ultraviolet (UV) light illumination on the characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) have been presented. The device parameters of a-Si:H TFT, such as threshold voltage, field-effect mobility, and subthreshold slope, have been degraded by electrical stress and visible light illumination, but substantially improved by UV radiation. This may be attributed to an annealing effect on the dangling-bond defects, involving a number of phonons generated by absorption of high energy UV photons in the a-Si:H TFT channel. It has been also observed that the off-current of a-Si:H TFT decreases remarkably while the on-current changes very little. From the experimental results, we report that the improved on/off current ratio of a-Si:H TFT may be achieved by UV radiation.

Hydrogenated Amorphous Silicon Thin-Film Deposition by Direct Photo-Enhanced Decomposition of Silane Using an Internal Hydrogen Discharge Lamp.

1986 ◽  
Vol 70 ◽  
Author(s):  
P. A. Robertson ◽  
W. I. Milne
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Thin Film Deposition ◽  
High Energy ◽  
Film Deposition ◽  
Discharge Lamp ◽  
Hydrogen Discharge ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Å/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous
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