Radiation hard amorphous silicon particle sensors
Keyword(s):
AbstractRadiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.
2010 ◽
Vol 428-429
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pp. 444-446
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2001 ◽
Vol 10
(3-7)
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pp. 1268-1272
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2012 ◽
Vol 358
(17)
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pp. 2039-2043
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1998 ◽
Vol 59
(9)
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pp. 1399-1405
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