Residue-Free Suspended Graphene Transferred by Perforated Template

A residue-free transfer method for graphene is proposed in this study, especially for the fabrication of suspended structures. Using perforated polymer templates, graphene can be precisely transferred onto the specific position in the perforated target SiO2/Si substrates without the need for polymer removal and the subsequent thermal annealing process. The surface of the transferred graphene by the proposed method was analyzed and corroborated via Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy. The results of these analyses suggest that the graphene surface has no polymeric residues resulting from the transfer process. The proposed method provides a powerful approach for the transfer of 2D materials and it enables the exploitation of their suspended structures for device applications as well as the physical characterizations without worry on the effect of contaminants.

Study of color centers in radiation-modified diamonds

We report on the optical properties of He-related color centers created by He-ion implantation and subsequent thermal annealing in natural diamonds, including the temperature (300–700 K) and excitation power (1–1800 kW/cm2)-dependent photoluminescence (PL) measurements. The prospects for the use of He-implanted diamonds for temperature sensing are discussed. The effect of fast neutron irradiation on the optical properties of Si-V color centers in CVD diamonds were also examined.

Radiation defects in NaCl matrix with reduced lattice symmetry caused by light cation doping and elastic uniaxial deformation

The processes of radiation defect creation and radiative relaxation of electronic excitations under applied local or/and uniaxial elastic deformation have been studied in NaCl crystals by means of optical absorption, luminescence and thermoactivation spectroscopy methods. In NaCl:Li at 80 K, X-ray-induced absorption bands peaked around 3.35 and 4.6 eV have been detected and ascribed to interstitial halide atoms located nearby Li impurity cations, HA(Li) centres. Subsequent thermal annealing of HA(Li) centres leads to the formation of polyhalide centres responsible for the absorption band at 5.35 eV. In an X-irradiated and stressed NaCl:Li crystal (degree of uniaxial elastic deformation of ε = 0.9%), the peak of thermally stimulated luminescence at ~115 K is composed of the ~2.7-eV emission appearing, in our opinion, due to the recombination of the electron, thermally released from an F′ centre, with a hole-type HA(Li) centre. The applied uniaxial elastic stress facilitates the self-trapping of anion excitons in regular regions of a NaCl lattice and impedes the energy transfer by mobile excitons to impurities/defects and, in turn, attenuates the Br-related luminescence peaked at 3.95 eV with respect to the π-emission of self-trapped excitons (~3.35 eV). The 3.95 eV emission has been detected in a natural NaCl crystal containing homologous Br impurity ions.

Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

Fluorine-based color centers in diamond

We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600–750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600–670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.

Benchmarking Perovskite Electrocatalysts’ OER Activity as Candidate Materials for Industrial Alkaline Water Electrolysis

The selection and evaluation of electrocatalysts as candidate materials for industrial alkaline water electrolysis is fundamental in the development of promising energy storage and sustainable fuels for future energy infrastructure. However, the oxygen evolution reaction (OER) activities of various electrocatalysts already reported in previous studies are not standardized. This work reports on the use of perovskite materials (LaFeO3, LaCoO3, LaNiO3, PrCoO3, Pr0.8Sr0.2CoO3, and Pr0.8Ba0.2CoO3) as OER electrocatalysts for alkaline water electrolysis. A facile co-precipitation technique with subsequent thermal annealing (at 700 °C in air) was performed. Industrial requirements and criteria (cost and ease of scaling up) were well-considered for the selection of the materials. The highest OER activity was observed in LaNiO3 among the La-based perovskites, and in Pr0.8Sr0.2CoO3 among the Pr-based perovskites. Moreover, the formation of double perovskites (Pr0.8Sr0.2CoO3 and Pr0.8Ba0.2CoO3) improved the OER activity of PrCoO3. This work highlights that the simple characterization and electrochemical tests performed are considered the initial step in evaluating candidate catalyst materials to be used for industrial alkaline water electrolysis.

Коррекция характеристик кремниевых фотодиодов путем применения ионной имплантации

The paper considers the data of measurement of electrophysical parameters of silicon pin-photodiodes after implantation of defect-forming ions and subsequent heat treatment, which open a new way to reduce the dark current and increase the output of suitable devices. The data of electrophysical measurements are compared with the results of structural studies. The efficiency of proton irradiation of the periphery of n+-p transitions to protect the surface of pin-photodiodes based on high resistance silicon was experimentally established. Optimal conditions - modes of proton irradiation and subsequent thermal annealing (E = 100+200+300 Kev, D = 21016 cm-2, T = 300С, t = 2 h), at which the formation of a surface layer with optimal characteristics for achieving minimum dark currents of photosensitive sites and the guard ring occurs. The application of these modes to serial pin-photodiodes with a depth of n+ - p-transitions  3 m allowed to reduce the dark current by an order of magnitude and increase the output of suitable devices.