Mass spectrometric evidencing on modified random network microstructure and medium range order in silicate glasses

2016 ◽  
Vol 434 ◽  
pp. 71-78 ◽  
Author(s):  
Michael I. Ojovan
1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.


2020 ◽  
Vol 6 (37) ◽  
pp. eabc2320
Author(s):  
Søren S. Sørensen ◽  
Christophe A. N. Biscio ◽  
Mathieu Bauchy ◽  
Lisbeth Fajstrup ◽  
Morten M. Smedskjaer

Despite the numerous technological applications of amorphous materials, such as glasses, the understanding of their medium-range order (MRO) structure—and particularly the origin of the first sharp diffraction peak (FSDP) in the structure factor—remains elusive. Here, we use persistent homology, an emergent type of topological data analysis, to understand MRO structure in sodium silicate glasses. To enable this analysis, we introduce a self-consistent categorization of rings with rigorous geometrical definitions of the structural entities. Furthermore, we enable quantitative comparison of the persistence diagrams by computing the cumulative sum of all points weighted by their lifetime. On the basis of these analysis methods, we show that the approach can be used to deconvolute the contributions of various MRO features to the FSDP. More generally, the developed methodology can be applied to analyze and categorize molecular dynamics data and understand MRO structure in any class of amorphous solids.


2013 ◽  
Vol 65 ◽  
pp. 50-57 ◽  
Author(s):  
Domingos De Sousa Meneses ◽  
Myriam Eckes ◽  
Leire del Campo ◽  
Cristiane N. Santos ◽  
Yann Vaills ◽  
...  

2000 ◽  
Vol 638 ◽  
Author(s):  
Xidong Chen ◽  
J. Murray Gibson ◽  
John Sullivan ◽  
Tom Friedmann ◽  
Paul Voyles

AbstractWe applied fluctuation microscopy technique to study medium-range order in tetrahedral semiconductor materials, such as amorphous silicon, amorphous diamond-like carbon films. It is shown that this technique is very sensitive to local structure changes in the medium range order and promises solutions to open questions that cannot be answered by current techniques. For asdeposited amorphous germanium and silicon, we previously identified a fine-grain para-crystallite structure [1, 2], which will be relaxed into a lower-energy continuous random network structure after thermal annealing. With the same fluctuation microscopy technique, we however found that thermal annealing introduces medium-range order in amorphous diamond-like carbon films. Future studies will be focused on modeling and systematic exploration of annealing effects.


1996 ◽  
Vol 128 (1-4) ◽  
pp. 77-91 ◽  
Author(s):  
L. Cormier ◽  
S. Creux ◽  
L. Galoisy ◽  
G. Calas ◽  
Ph. Gaskell

Metals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1840
Author(s):  
Masato Shimono ◽  
Hidehiro Onodera

The atomic structure of medium-range order in metallic glasses is investigated by using molecular dynamics (MD) simulations. Glass formation processes were simulated by rapid cooling from liquid phases of a model binary alloy system of different-sized elements. Two types of short-range order of atomic clusters with the five-fold symmetry are found in glassy phases: icosahedral clusters (I-clusters) formed around the smaller-sized atoms and Frank–Kasper clusters (i.e., Z14, Z15, and Z16 clusters (Z-clusters)) formed around the bigger-sized atoms. Both types of clusters (I-and Z-clusters) are observed even in liquid phases and the population of them goes up as the temperature goes down. A considerable atomic size difference between alloying elements would enhance the formation of both the I- and Z-clusters. In glassy phases, the I- and Z-clusters are mutually connected to form a complicated network, and the network structure becomes denser as the structural relaxation goes on. In the network, the medium-range order is mainly constructed by the volume sharing type connection between I- and Z-clusters. Following Nelson’s disclination theory, the network structure can be understood as a random network of Z-clusters, which is complimentarily surrounded by another type of network formed by I-clusters.


2001 ◽  
Vol 16 (11) ◽  
pp. 3030-3033 ◽  
Author(s):  
Ju-Yin Cheng ◽  
J. M. Gibson ◽  
D. C. Jacobson

Medium-range order in ion-implanted amorphous silicon has been observed using fluctuation electron microscopy. In fluctuation electron microscopy, variance of dark-field image intensity contains the information of high-order atomic correlations, primarily in medium-range order length scale (1–3 nm). Thermal annealing greatly reduces the order and leaves a random network. It appears that the free energy change previously observed on relaxation may therefore be associated with randomization of the network. In this paper, we discuss the origin of the medium-range order during implantation, which can be interpreted as a paracrystalline state, that is, a disordered network enclosing compacts of highly topologically ordered grains on the length scale of 1–3 nm with significant strain fields.


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