Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance

2006 ◽  
pp. 571-574
Author(s):  
X. Kerbiriou ◽  
Marie France Barthe ◽  
S. Esnouf ◽  
P. Desgardin ◽  
G. Blondiaux ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Positron Annihilation ◽  
Electron Irradiation ◽  
Positron Annihilation Spectroscopy ◽  
Low Energy ◽  
Energy Electron ◽  
Paramagnetic Resonance ◽  
Vacancy Defects ◽  
Low Energy Electron ◽  
Electron Paramagnetic

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance

2006 ◽  
Vol 527-529 ◽  
pp. 571-574 ◽  
Author(s):  
X. Kerbiriou ◽  
Marie France Barthe ◽  
S. Esnouf ◽  
P. Desgardin ◽  
G. Blondiaux ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Positron Annihilation ◽  
Electron Irradiation ◽  
Positron Annihilation Spectroscopy ◽  
Low Energy ◽  
Energy Electron ◽  
Paramagnetic Resonance ◽  
Vacancy Defects ◽  
Low Energy Electron ◽  
Electron Paramagnetic

In this work we used Positron Annihilation Spectroscopy (PAS) and Electron Paramagnetic Resonance (EPR) to investigate the properties of vacancy defects produced by low energy electron irradiation. N-doped 3C-SiC and 6H-SiC monocrystals have been irradiated with electrons at different energies from 240keV to 900keV. EPR measurements show that Frenkel pairs VSi 3-/Si are created in 6H-SiC when electron irradiation is performed at low energy (240-360 keV). EPR also indicates that the silicon displacement threshold energy is higher in 3C-SiC than in 6HSiC. Moreover, PAS results show that the size and concentration of the vacancy defects decrease when the electron energy decreases for both polytypes. PAS detects vacancy defects in 240keV electron irradiated 3C-SiC, and the detection of the carbon vacancy is proposed.

A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC

2006 ◽  
Vol 527-529 ◽  
pp. 477-480
Author(s):  
W. Sullivan ◽  
John W. Steeds ◽  
Hans Jürgen von Bardeleben ◽  
J.L. Cantin
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Paramagnetic Resonance Study ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Direction ◽  
Paramagnetic Resonance ◽  
Defect Generation ◽  
Low Energy Electron ◽  
Threshold Energies ◽  
Electron Paramagnetic

Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the [0001] or [000-1] direction. PL and EPR techniques have been used to investigate the dependence of the beam direction on defect generation and, together with a sample irradiated at a higher fluence, to correlate differences brought about by irradiating with a change in electron fluence. Attempts are made to correlate the information derived from the two techniques.

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 401-404
Author(s):  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
Henrik Pedersen ◽  
Junichi Isoya ◽  
Norio Morishita ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Detection Limit ◽  
Low Energy ◽  
Free Standing ◽  
Simultaneous Observation ◽  
Paramagnetic Resonance ◽  
Intensity Changes ◽  
Low Energy Electron ◽  
Reliable Interpretation ◽  
Electron Paramagnetic

Photoexcitation electron paramagnetic resonance (photo-EPR) was used to determine deep levels related to the carbon vacancy (VC) in 4H-SiC. High-purity free-standing n-type 4H-SiC epilayers with concentration of intrinsic defects (except the photo-insensitive SI1 center) below the detection limit of EPR were irradiated with low-energy (200 keV) electrons to create mainly VC and defects related to the C sublattice. The simultaneous observation of and signals, their relative intensity changes and the absence of other defects in the sample provide a more straight and reliable interpretation of the photo-EPR results. The study suggests that the (+|0) level of VC is located at ~EC–1.77 eV in agreement with previously reported results and its single and double acceptor levels may be at ~ EC–0.8 eV and ~ EC–1.0 eV, respectively.

Vacancy defects inp-type6H−SiCcreated by low-energy electron irradiation

2000 ◽  
Vol 62 (16) ◽  
pp. 10841-10846 ◽  
Author(s):  
H. J. von Bardeleben ◽  
J. L. Cantin ◽  
L. Henry ◽  
M. F. Barthe
Keyword(s):  
Electron Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Vacancy Defects ◽  
Low Energy Electron

The DC Surface Flashover Performance Research of Polyimide Under Low-Energy Electron Irradiation Environment

2016 ◽  
Vol 44 (1) ◽  
pp. 85-92 ◽  
Author(s):  
Chenyang Liu ◽  
Ying Zheng ◽  
Pei Yang ◽  
Xiaoquan Zheng ◽  
Ying Li ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Flashover ◽  
Low Energy Electron ◽  
Performance Research

Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 453-456 ◽  
Author(s):  
T. Umeda ◽  
Norio Morishita ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Junichi Isoya
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Irradiation ◽  
Electron Paramagnetic Resonance Study ◽  
Dangling Bond ◽  
Charged State ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
P Type ◽  
Electron Paramagnetic ◽  
Positively Charged

Carbon antisite-vacancy pair (CSiVC) is a fundamental defect in SiC, and is theoretically predicted to be very stable in p-type materials. However, this pair was found only in the form of a negatively charged state (i.e., the SI5 center = CSiVC −) in n-type and semi-insulating 4H-SiC, and yet, its presence has not been shown in p-type SiC. In this report, we present the first EPR observation on positively charged CSiVC pairs in p-type 4H-SiC. By carefully examining p-type samples after electron irradiation, we found a pair of new defects with C3v and C1h symmetries. They correspond to “c-axial” pairs (C3v) and “basal” pairs (C1h) of CSiVC +, respectively. The positively charged pairs are characterized by a strong 13C hyperfine interaction due to a dangling bond on a carbon antisite (CSi), which is successfully resolved for the c-axial pairs.

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