Microstructure evolution of a ZrC coating layer in TRISO particles during high-temperature annealing

2016 ◽  
Vol 479 ◽  
pp. 93-99 ◽  
Author(s):  
Daejong Kim ◽  
Young Bum Chun ◽  
Myeong Jin Ko ◽  
Hyeon-Geun Lee ◽  
Moon-Sung Cho ◽  
...  
2021 ◽  
Vol 904 ◽  
pp. 117-123
Author(s):  
Yi Cui ◽  
Yun Fei Zhang ◽  
Yan Guang Han ◽  
Da Lv

The effect of high temperature annealing on microstructure evolution of Ni-24Fe-14Cr-8Mo alloy was investigated through Optical Microscopy (OM), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Rockwell Hardness Testing Machine. Three kinds of grain growth patterns were found at different annealing temperatures due to carbides precipitation and dissolution. After a combination of high temperature annealing and aging treatment, the hardness versus time curves performed a parabolic pattern. The highest hardness was achieved under 1070°C/60 minutes treatment, and the desirable annealing time should be 60 minutes to 90 minutes.


2008 ◽  
Vol 2008 (0) ◽  
pp. 21-22
Author(s):  
Jun AIHARA ◽  
Shohei UETA ◽  
Atsushi YASUDA ◽  
Hitoshi TAKEUCHI ◽  
Kazuhiro SAWA ◽  
...  

2007 ◽  
Vol 0 (0) ◽  
pp. 070916022646002-??? ◽  
Author(s):  
Jun Aihara ◽  
Shohei Ueta ◽  
Atsushi Yasuda ◽  
Hideharu Ishibashi ◽  
Tomoo Takayama ◽  
...  

2009 ◽  
Vol 92 (1) ◽  
pp. 197-203 ◽  
Author(s):  
Jun Aihara ◽  
Shohei Ueta ◽  
Atsushi Yasuda ◽  
Hideharu Ishibashi ◽  
Yasuhiro Mozumi ◽  
...  

2008 ◽  
Vol 376 (2) ◽  
pp. 146-151 ◽  
Author(s):  
Shohei Ueta ◽  
Jun Aihara ◽  
Atsushi Yasuda ◽  
Hideharu Ishibashi ◽  
Tomoo Takayama ◽  
...  

2007 ◽  
Vol 2007 (0) ◽  
pp. 11-12
Author(s):  
Jun AIHARA ◽  
Shohei UETA ◽  
Atsushi YASUDA ◽  
Hideharu ISHIBASHI ◽  
Kazuhiro SAWA ◽  
...  

2006 ◽  
Vol 2006 (0) ◽  
pp. 13-14
Author(s):  
Jun AIHARA ◽  
Shohei UETA ◽  
Atsushi YASUDA ◽  
Hideharu ISHIBASHI ◽  
Kazuhiro SAWA ◽  
...  

Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.


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